Ye Zejiu, Wen Xu, Wan Weiqiang, Liu Fuchu, Bai Wei, Xu Chao, Chen Hui, Gong Pan, Han Guangchao
School of Mechanical Engineering and Electronic Information, China University of Geosciences, Wuhan 430074, China.
Shenzhen Research Institute, China University of Geosciences, Shenzhen 518063, China.
Materials (Basel). 2023 Aug 10;16(16):5572. doi: 10.3390/ma16165572.
Silicon carbide (SiC) ceramic material has become the most promising third-generation semiconductor material for its excellent mechanical properties at room temperature and high temperature. However, SiC ceramic machining has serious tool wear, low machining efficiency, poor machining quality and other disadvantages due to its high hardness and high wear resistance, which limits the promotion and application of such materials. In this paper, comparison experiments of longitudinal torsional ultrasonic vibration grinding (LTUVG) and common grinding (CG) of SiC ceramics were conducted, and the longitudinal torsional ultrasonic vibration grinding SiC ceramics cutting force model was developed. In addition, the effects of ultrasonic machining parameters on cutting forces, machining quality and subsurface cracking were investigated, and the main factors and optimal parameters affecting the cutting force improvement rate were obtained by orthogonal tests. The results showed that the maximum improvement of cutting force, surface roughness and subsurface crack fracture depth by longitudinal torsional ultrasonic vibrations were 82.59%, 22.78% and 30.75%, respectively. A longitudinal torsional ultrasonic vibrations cutting force prediction model containing the parameters of tool, material properties and ultrasound was established by the removal characteristics of SiC ceramic material, ultrasonic grinding principle and brittle fracture theory. And the predicted results were in good agreement with the experimental results, and the maximum error was less than 15%. The optimum process parameters for cutting force reduction were a spindle speed of 22,000 rpm, a feed rate of 600 mm/min and a depth of cut of 0.011 mm.
碳化硅（SiC）陶瓷材料因其在室温和高温下优异的机械性能，已成为最具潜力的第三代半导体材料。然而，由于SiC陶瓷硬度高、耐磨性强，其加工存在刀具磨损严重、加工效率低、加工质量差等缺点，限制了此类材料的推广应用。本文对SiC陶瓷进行了纵向扭转超声振动磨削（LTUVG）与普通磨削（CG）的对比试验，并建立了纵向扭转超声振动磨削SiC陶瓷的切削力模型。此外，研究了超声加工参数对切削力、加工质量和亚表面裂纹的影响，并通过正交试验得到了影响切削力改善率的主要因素和最优参数。结果表明，纵向扭转超声振动使切削力、表面粗糙度和亚表面裂纹断裂深度的最大改善率分别为82.59%、22.78%和30.75%。基于SiC陶瓷材料的去除特性、超声磨削原理和脆性断裂理论，建立了包含刀具、材料性能和超声参数的纵向扭转超声振动切削力预测模型。预测结果与试验结果吻合良好，最大误差小于15%。降低切削力的最佳工艺参数为主轴转速22000 rpm、进给速度600 mm/min和切削深度0.011 mm。
