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通过CoSnS中p-d电子杂化诱导的表面戈薇电子态的发现与构建

Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in CoSnS.

作者信息

Huang Li, Kong Xianghua, Zheng Qi, Xing Yuqing, Chen Hui, Li Yan, Hu Zhixin, Zhu Shiyu, Qiao Jingsi, Zhang Yu-Yang, Cheng Haixia, Cheng Zhihai, Qiu Xianggang, Liu Enke, Lei Hechang, Lin Xiao, Wang Ziqiang, Yang Haitao, Ji Wei, Gao Hong-Jun

机构信息

Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.

School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.

出版信息

Nat Commun. 2023 Aug 26;14(1):5230. doi: 10.1038/s41467-023-40942-2.

Abstract

Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of CoSnS, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular CoSnS surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the CoSn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the CoSn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.

摘要

Kagome晶格材料在量子计算应用中具有吸引人的特性,但其合成仍然具有挑战性。在此,基于对CoSnS两个可解理表面的确切识别,我们展示了在以Sn为终止面的三角形CoSnS表面上的表面Kagome电子态(SKESs)。这种SKESs是由表面Sn(次表面S)原子与表面下CoSn层中埋藏的Co Kagome晶格网络之间的垂直p-d电子杂化所印记的。由于随后Sn和S原子以角共享的方式进行横向杂化,CoSn层的Kagome对称性和拓扑电子性质接近于Sn表面。通过qPlus非接触原子力显微镜(nc-AFM)和密度泛函理论计算验证了SKESs和这两种杂化。理论上证明了用其他III-V族元素(Se或Te)对表面Sn(次表面S)进行原子取代可以实现具有可调谐性质的SKESs的构建。这项工作展示了nc-AFM在表征局域拓扑态方面的强大能力,并揭示了使用传统表面沉积技术合成大面积过渡金属基Kagome晶格材料的策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fb1/10460379/5f75f665108d/41467_2023_40942_Fig1_HTML.jpg

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