Wang Changyuan, Cao Wenjun, Liang Cen, Zhao Hanyu, Cheng Chao, Huang Shouguo, Yu Yi, Wang Chunchang
Laboratory of Dielectric Functional Materials, School of Materials Science & Engineering, Anhui University, Hefei 230601, China.
Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
ACS Appl Mater Interfaces. 2023 Sep 13;15(36):42774-42783. doi: 10.1021/acsami.3c08168. Epub 2023 Aug 29.
Lead-free dielectric capacitors are excellent candidates for pulsed power devices. However, their low breakdown strength () strongly limits their energy-storage performance. In this study, SrBiTiO (SBT) and Bi(MgHf)O (BMH) were introduced into BaTiO (BT) ceramics to suppress interfacial polarization and modulate the microstructure. The results show that the introduction of SBT and BMH increases the band gap width, reduces the domain size, and, most importantly, successfully attenuates the interfacial polarization. Significantly enhanced values were obtained in (1 - )(0.65BaTiO-0.35SrBiTiO)-Bi(MgHf)O (BSBT-BMH) ceramics. Meanwhile, the interfacial polarization was reduced to near zero in the sample with = 0.10, achieving an ultrahigh (64 kV/mm) and a very large recoverable energy-storage density ( ≈ 9.13 J/cm). In addition, the sample has excellent thermal stability (in line with EIA-X7R standards) and frequency stability. These properties indicate that the BSBT-0.10BMH ceramic holds promising potential for the application of pulsed power devices.
无铅介电电容器是脉冲功率器件的理想候选材料。然而，它们较低的击穿强度（）严重限制了其储能性能。在本研究中，将SrBiTiO（SBT）和Bi（MgHf）O（BMH）引入BaTiO（BT）陶瓷中，以抑制界面极化并调控微观结构。结果表明，SBT和BMH的引入增加了带隙宽度，减小了畴尺寸，最重要的是成功减弱了界面极化。在（1 - ）（0.65BaTiO - 0.35SrBiTiO）- Bi（MgHf）O（BSBT - BMH）陶瓷中获得了显著提高的值。同时，在 = 0.10的样品中，界面极化降低至接近零，实现了超高（64 kV/mm）和非常大的可恢复储能密度（≈ 9.13 J/cm）。此外，该样品具有优异的热稳定性（符合EIA - X7R标准）和频率稳定性。这些特性表明，BSBT - 0.10BMH陶瓷在脉冲功率器件应用方面具有广阔的潜力。
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