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通过碘退火和SiO涂层处理实现超快衰减、超高空间分辨率及稳定的γ-CuI单晶

Ultrafast Decay, Ultrahigh Spatial Resolution, and Stable γ-CuI Single Crystal Treated by Iodine Annealing and SiO Coating.

作者信息

Hao Shutong, Liu Xiaolin, Li Qianli, Gu Mu, Cheng Shuai, Zhao Jingtai

机构信息

Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.

School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.

出版信息

ACS Appl Mater Interfaces. 2023 Sep 20;15(37):44493-44502. doi: 10.1021/acsami.3c07729. Epub 2023 Sep 7.

DOI:10.1021/acsami.3c07729
PMID:37675462
Abstract

The demand for scintillators with ultrafast decay times, high spatial resolutions, and high stabilities is increasing due to the development of ultrafast hard X-ray detection, hard X-ray imaging, and high-energy physics facilities. γ-CuI single crystals, which exhibit ultrafast luminescence and high stopping power for hard X-rays, hold great promise for such applications. However, slow luminescence and poor stability caused by surface iodine deficiencies hinder the practical use of γ-CuI. Herein, we treated a γ-CuI single crystal by iodine annealing and SiO coating and investigated its crystal structure and luminescence properties in detail. Iodine annealing significantly enhanced the near-band-edge emission of the γ-CuI crystal with an ultrafast decay time of less than 1 ns, while completely suppressing the slow luminescence. Moreover, the SiO film effectively prevented the oxidation and decomposition of surface iodine, leading to substantial improvement in luminescence stability. The γ-CuI crystal demonstrated an ultrahigh spatial resolution of 1.5 μm in X-ray imaging, highlighting its potential for ultrafast hard X-ray imaging applications. This study provides insight into the growth, optimization, and application of γ-CuI crystals, advancing the field of scintillator materials.

摘要

由于超快硬X射线探测、硬X射线成像和高能物理设施的发展,对具有超快衰减时间、高空间分辨率和高稳定性的闪烁体的需求正在增加。γ-CuI单晶具有超快发光特性和对硬X射线的高阻止本领,在这类应用中极具潜力。然而,表面碘缺陷导致的发光缓慢和稳定性差阻碍了γ-CuI的实际应用。在此,我们对γ-CuI单晶进行了碘退火和SiO包覆处理,并详细研究了其晶体结构和发光特性。碘退火显著增强了γ-CuI晶体的近带边发射,其超快衰减时间小于1 ns,同时完全抑制了缓慢发光。此外,SiO薄膜有效地防止了表面碘的氧化和分解,使发光稳定性得到显著提高。γ-CuI晶体在X射线成像中表现出1.5μm的超高空间分辨率,突出了其在超快硬X射线成像应用中的潜力。本研究为γ-CuI晶体的生长、优化和应用提供了见解,推动了闪烁体材料领域的发展。

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