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用于高效钙钛矿量子点发光二极管的高耐溶剂小分子空穴传输材料。

Highly Solvent Resistant Small-Molecule Hole-Transporting Materials for Efficient Perovskite Quantum Dot Light-Emitting Diodes.

作者信息

Zhang Daqing, Wei Changting, Li Xiansheng, Guo Shiyan, Luo Xin, Jin Xin, Zhou Haitao, Huang Jinhai, Su Jianhua, Xu Bo

机构信息

Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Feringa Nobel Prize Scientist Joint Research Centre, Frontiers Science Center for Materiobiology and Dynamic Chemistry, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China.

MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

出版信息

ACS Appl Mater Interfaces. 2023 Sep 20;15(37):44043-44053. doi: 10.1021/acsami.3c08691. Epub 2023 Sep 11.

Abstract

Perovskite quantum dot light-emitting diodes (Pe-QLEDs) have been shown as promising candidates for next-generation displays and lightings due to their unique feature of wide color gamut and high color saturation. Hole-transporting materials (HTMs) play crucial roles in the device performance and stability of Pe-QLEDs. However, small-molecule HTMs have been less studied in Pe-QLEDs due to their poor solvent resistance and low hole mobility. In this work, three novel small-molecule HTMs employing benzimidazole as the center core, named , , and , were designed and synthesized for application in Pe-QLEDs. One of the tailored HTM- exhibits excellent solvent resistant ability to the perovskite quantum dot (QD) inks due to its proper solubility and low surface energy. Our result clearly demonstrated that the synergistic effect of poor solubility and low surface energy facilitates the achievement of good solvent resistance to perovskite QD inks. As a result, a promising maximal external quantum efficiency (EQE) of 14.1% is achieved in -based CsPbBr Pe-QLEDs, which is much higher than that of (9.16%) and (6.60%)-based devices, which is comparable to the PTAA reference (EQE ∼ 15.8%) under the same conditions. To the best of our knowledge, this is the first example that a benzimidazole-based small-molecule HTM demonstrated a good application in Pe-QLEDs. Our work provides new guidance for the rational design of small-molecule HTMs with high solvent resistance for efficient Pe-QLEDs and other photoelectronic devices.

摘要

钙钛矿量子点发光二极管(Pe-QLEDs)因其具有广色域和高色饱和度的独特特性,已成为下一代显示器和照明设备的有力候选者。空穴传输材料(HTMs)在Pe-QLEDs的器件性能和稳定性方面起着关键作用。然而,小分子HTMs由于其耐溶剂性差和空穴迁移率低,在Pe-QLEDs中的研究较少。在这项工作中,设计并合成了三种以苯并咪唑为中心核的新型小分子HTMs,命名为 、 和 ,用于Pe-QLEDs。其中一种定制的HTM- 由于其适当的溶解性和低表面能,对钙钛矿量子点(QD)墨水表现出优异的耐溶剂能力。我们的结果清楚地表明,低溶解性和低表面能的协同效应有助于实现对钙钛矿QD墨水的良好耐溶剂性。结果,基于 的CsPbBr Pe-QLEDs实现了高达14.1%的有前景的最大外量子效率(EQE),远高于基于 (9.16%)和 (6.60%)的器件,在相同条件下与PTAA参考器件(EQE ∼ 15.8%)相当。据我们所知,这是基于苯并咪唑的小分子HTM在Pe-QLEDs中表现出良好应用的首个实例。我们的工作为合理设计具有高耐溶剂性的小分子HTMs以用于高效Pe-QLEDs和其他光电器件提供了新的指导。

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