Sangiovanni Davide G, Kaufmann Kevin, Vecchio Kenneth
Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden.
Department of NanoEngineering, UC San Diego, La Jolla, CA 92093, USA.
Sci Adv. 2023 Sep 15;9(37):eadi2960. doi: 10.1126/sciadv.adi2960. Epub 2023 Sep 13.
Although high-entropy carbides (HECs) have hardness often superior to that of parent compounds, their brittleness-a problem shared with most ceramics-has severely limited their reliability. Refractory HECs in particular are attracting considerable interest due to their unique combination of mechanical and physical properties, tunable over a vast compositional space. Here, combining statistics of crack formation in bulk specimens subject to mild, moderate, and severe nanoindentation loading with ab initio molecular dynamics simulations of alloys under tension, we show that the resistance to fracture of cubic-B1 HECs correlates with their valence electron concentration (VEC). Electronic structure analyses show that VEC ≳ 9.4 electrons per formula unit enhances alloy fracture resistance due to a facile rehybridization of electronic metallic states, which activates transformation plasticity at the yield point. Our work demonstrates a reliable strategy for computationally guided and rule-based (i.e., VEC) engineering of deformation mechanisms in high entropy, solid solution, and doped ceramics.
尽管高熵碳化物(HECs)的硬度通常优于其母体化合物,但其脆性——这是大多数陶瓷共有的问题——严重限制了它们的可靠性。特别是难熔高熵碳化物,由于其独特的机械和物理性能组合,且在广阔的成分空间内可调,因此引起了相当大的关注。在这里,我们将承受轻度、中度和重度纳米压痕载荷的块状试样中的裂纹形成统计数据与合金在拉伸下的从头算分子动力学模拟相结合,表明立方-B1高熵碳化物的抗断裂性与其价电子浓度(VEC)相关。电子结构分析表明,每分子式单元的VEC≳9.4个电子会增强合金的抗断裂性,这是由于电子金属态的容易再杂化,从而在屈服点激活了转变塑性。我们的工作展示了一种可靠的策略,用于在高熵、固溶体和掺杂陶瓷中进行基于计算指导和规则(即VEC)的变形机制工程设计。