Department of Chemistry, Shahreza Branch, Islamic Azad University, P. O. Box 311-86145, Shahreza, Isfahan, Islamic Republic of Iran.
Environ Sci Pollut Res Int. 2023 Oct;30(48):105440-105456. doi: 10.1007/s11356-023-29730-z. Epub 2023 Sep 16.
A binary AgI/ AgWO photocatalyst was fabricated and characterized by SEM, XRD, UV-Vis DRS, and FT-IR. It was then used to photodegrade sodium ceftriaxone (CTX) in an aqueous solution. The band gap energies of 2.95, 2.78, and 2.62 eV were obtained by the Kubelka-Munk model for AgWO, AgI, and AgI/AgWO catalysts. The samples have pH values of 6.9, 4.2, and 6.6, respectively. The synergistic photocatalytic activity of the coupled system depended on the AgI:AgWO mole ratio and grinding time (optimums:mole ratio of 4:1 and time 30 min). The experimental design was used for optimizing the conditions and a quadratic model well-processed the data based on the model F value of 131.87 > F = 2.55 and LOF F value of 0.78 < F = 8.78. The optimized RSM run included the irradiation time of 85 min, 3.5 mg/L of CTX sample at pH 9, and a catalyst dose of 1.0 g/L. Under the optimized conditions, about 63% of CTX molecules were photodegraded. In the study of the scavenging agents, the direct Z-scheme mechanism accumulated electrons in the CB-AgI and the holes in the VB-AgWO level, as stronger reducing and oxidizing centers than the accumulated electrons and holes of the type (II) heterojunction mechanism. Compared to a CTX oxidation potential of about 0.06 V, the direct Z-scheme mechanism is more favorable to reduce or oxidize it.
一种双 AgI/AgWO 光催化剂通过 SEM、XRD、UV-Vis DRS 和 FT-IR 进行了制备和表征。然后,它被用于在水溶液中光降解头孢曲松钠 (CTX)。通过 Kubelka-Munk 模型获得 AgWO、AgI 和 AgI/AgWO 催化剂的带隙能分别为 2.95、2.78 和 2.62 eV。样品的 pH 值分别为 6.9、4.2 和 6.6。耦合体系的协同光催化活性取决于 AgI:AgWO 摩尔比和研磨时间(最佳值:摩尔比为 4:1,时间 30 分钟)。实验设计用于优化条件,基于模型 F 值为 131.87 > F = 2.55 和 LOF F 值为 0.78 < F = 8.78 的二次模型很好地处理了数据。优化的 RSM 运行包括 85 分钟的照射时间、pH 值为 9 的 3.5 mg/L 的 CTX 样品和 1.0 g/L 的催化剂剂量。在优化条件下,约 63%的 CTX 分子被光降解。在清除剂的研究中,直接 Z 型机制在 CB-AgI 中积累电子,在 VB-AgWO 能级中积累空穴,作为比(II)异质结机制中积累的电子和空穴更强的还原和氧化中心。与 CTX 氧化电位约 0.06 V 相比,直接 Z 型机制更有利于还原或氧化它。