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手性分子在铁磁基底上的对映体敏感生长动力学及电荷-宇称-自旋(CISS)效应的起源

Enantiosensitive growth dynamics of chiral molecules on ferromagnetic substrates and the origin of the CISS effect.

作者信息

Spilsbury M J, Feito A, Delgado A, Capitán M J, Álvarez J, de Miguel J J

机构信息

Dpto. Física de la Materia Condensada, Univ. Autónoma de Madrid, 29049 Madrid, Spain.

Dpto. Física. Univ. Nacional Autónoma de Honduras, Escuela de Biología, San Pedro Sula, Honduras.

出版信息

J Chem Phys. 2023 Sep 21;159(11). doi: 10.1063/5.0160011.

DOI:10.1063/5.0160011
PMID:37728205
Abstract

The recent demonstration of the existence of an intimate relationship between the chiral structure of some materials and the spin polarization of electrons transmitted through them, what has been called the chirality-induced spin selectivity (CISS) effect, is sparking interest in many related phenomena. One of the most notorious is the possibility of using magnetic materials to apply enantioselective interactions on chiral molecules and chemical reactions involving them. In this work, x-ray photoelectron spectroscopy has been used to characterize the adsorption and growth kinetics of enantiopure organic molecules on magnetic (Co) and non-magnetic (Cu) substrates. While on these latter, no significant enantiosensitive effects are found, on spin-polarized, in-plane magnetized Co surfaces, the two enantiomers have been found to deposit differently. The observed effects have been interpreted as the result of one of the enantiomers being adsorbed in a transient, weakly bound physisorbed-like state with higher mobility due to limited, spin-selective charge transfer between it and the substrate. The study of these phenomena can provide insight into the fundamental mechanisms responsible for the CISS effect.

摘要

最近有证据表明,某些材料的手性结构与穿过它们的电子的自旋极化之间存在密切关系,即所谓的手性诱导自旋选择性(CISS)效应,这引发了人们对许多相关现象的兴趣。其中最引人注目的一个可能性是利用磁性材料对手性分子以及涉及这些分子的化学反应施加对映选择性相互作用。在这项工作中,X射线光电子能谱被用于表征对映体纯有机分子在磁性(Co)和非磁性(Cu)衬底上的吸附和生长动力学。虽然在后者上未发现明显的对映体敏感效应,但在自旋极化的面内磁化Co表面上,发现两种对映体的沉积方式不同。观察到的效应被解释为其中一种对映体以瞬态、弱结合的类似物理吸附状态被吸附的结果,但由于它与衬底之间有限的自旋选择性电荷转移,该状态具有更高的迁移率。对这些现象的研究可以深入了解导致CISS效应的基本机制。

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