Yu Sheng, Shi Wenwu, Li Qiliang, Xu Feixiang, Gu Li, Wang Xinzhong
Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen 518172, China.
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA.
Phys Chem Chem Phys. 2023 Oct 4;25(38):26211-26218. doi: 10.1039/d3cp01226c.
We propose a reconfigurable spin tunnel diode based on a small spin-gapped semiconductor (non-doped VS monolayer) and semi-metallic magnets (doped VS monolayer) separated by a thin insulating tunneling barrier (h-BN). By using first-principles calculations assisted by the nonequilibrium Green's function method, we have carried out a comprehensive study of spin-dependent current and spin transport properties while varying the bias. The device exhibited a magnetization-controlled diode-like behavior with forward-allowed current under antiparallel magnetizations and reverse-forbidden current under parallel magnetizations at the two electrodes. The threshold voltage is tunable by the hole doping density of VS monolayers. The doping effect on VS monolayers indicates that the magnetic moments, the Heisenberg exchange parameters and Curie temperatures can be monotonically reduced by a larger hole doping density. Our study on VS heterostructures has presented a simple and practical device strategy with very promising applications in spintronics.
我们提出了一种基于小型自旋能隙半导体（非掺杂VS单层）和半金属磁体（掺杂VS单层）的可重构自旋隧道二极管，二者由薄绝缘隧穿势垒（h-BN）隔开。通过使用非平衡格林函数方法辅助的第一性原理计算，我们在改变偏置的同时，对自旋相关电流和自旋输运特性进行了全面研究。该器件在两个电极处呈现出磁化控制的二极管状行为，在反平行磁化下具有正向允许电流，在平行磁化下具有反向禁止电流。阈值电压可通过VS单层的空穴掺杂密度进行调节。对VS单层的掺杂效应表明，更大的空穴掺杂密度可使磁矩、海森堡交换参数和居里温度单调降低。我们对VS异质结构的研究提出了一种简单实用的器件策略，在自旋电子学中具有非常广阔的应用前景。
