Yurov Vladimir, Bolshakov Andrey, Ralchenko Victor, Fedorova Irina, Martyanov Artem, Pivovarov Pavel, Artemov Vladimir, Khomich Andrew, Khmelnitskiy Roman, Boldyrev Kirill
Prokhorov General Physics Institute, Russian Academy of Sciences, Vavilov str. 38, Moscow 119991, Russia.
Harbin Institute of Technology, 92 Xidazhi Str., 150001 Harbin, P. R. China.
Phys Chem Chem Phys. 2023 Oct 11;25(39):26623-26631. doi: 10.1039/d3cp03967f.
We report the growth of Ge-doped homoepitaxial diamond films by microwave plasma CVD in GeH-CH-H gas mixtures at moderate pressures (70-100 Torr). Optical emission spectroscopy was used to monitor Ge, H, and C species in the plasma at different process parameters, and trends for intensities of those radicals, gas temperature, and excitation temperature, with variations of GeH or CH precursor concentrations, were investigated. The film deposited on (111)-oriented single crystal diamond substrates in a high growth rate regime revealed a strong emission of a germanium-vacancy (GeV) color center with a zero-phonon line at ≈604 nm wavelength in photoluminescence (PL) spectra, confirming the successful doping. The observed PL shift for the GeV defect is caused by stress in the films, as evidenced and quantified by Raman spectra. These results suggest that doping with Ge using a GeH precursor is a convenient method of controlling the formation of GeV centers in epitaxial diamond films for photonic applications.
我们报道了在中等压力（70 - 100托）下，通过微波等离子体化学气相沉积法在GeH₄ - CH₄ - H₂气体混合物中生长掺锗同质外延金刚石薄膜的情况。利用光发射光谱法监测不同工艺参数下等离子体中的锗、氢和碳物种，并研究了这些自由基的强度、气体温度和激发温度随GeH₄或CH₄前驱体浓度变化的趋势。在高生长速率条件下沉积在（111）取向的单晶金刚石衬底上的薄膜，在光致发光（PL）光谱中显示出锗空位（GeV）色心在≈604 nm波长处有零声子线的强烈发射，证实了掺杂成功。如拉曼光谱所证明和量化的那样，观察到的GeV缺陷的PL位移是由薄膜中的应力引起的。这些结果表明，使用GeH₄前驱体进行锗掺杂是一种控制外延金刚石薄膜中GeV中心形成以用于光子应用的便捷方法。
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