He Ding, Fan Jingxin, Zhu Zhiqiang, Yuan Yang, Yu Zhongjun
Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China.
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China.
Micromachines (Basel). 2023 Aug 29;14(9):1692. doi: 10.3390/mi14091692.
Compactness has obtained sufficient importance in wideband phase shifter design considerations, as it is directly related to fabrication cost. In this paper, a novel structure was presented to create compact broadband 180-degree phase shifter, which has the advantages of enhanced bandwidth and significantly reduced chip area. The proposed configuration consists of edge-coupled multi-microstrip lines (ECMML) and an artificial transmission line (ATL) with dual-shorted inductors, both of which have the periodic shunt load of capacitors. The ECMML can provide a high coupling coefficient, leading to an increase in the bandwidth, while the introduced capacitors can greatly reduce the line length (35.8% of the conventional method). To verify the relevant mechanisms, a wideband switched network with compact dimensions of 0.67 × 0.46 mm was designed via 0.15-micrometer GaAs pHEMT technology. Combined with the measured switch transistor, it was shown that the proposed phase shifter exhibits an insertion loss of less than 2 dB, a return loss of greater than 12 dB, a maximum phase error of less than 0.6° and a channel amplitude difference of less than 0.1 dB in the range of 10 to 20 GHz.
在宽带移相器的设计考量中，紧凑性已变得至关重要，因为它与制造成本直接相关。本文提出了一种新颖的结构来制造紧凑的宽带180度移相器，该移相器具有带宽增加和芯片面积显著减小的优点。所提出的结构由边缘耦合多微带线（ECMML）和带有双短路电感的人工传输线（ATL）组成，两者都具有电容的周期性并联负载。ECMML可以提供高耦合系数，从而增加带宽，而引入的电容可以大大缩短线路长度（是传统方法的35.8%）。为了验证相关机制，通过0.15微米GaAs pHEMT技术设计了一个尺寸紧凑为0.67×0.46毫米的宽带开关网络。结合测量的开关晶体管，结果表明，所提出的移相器在10至20 GHz范围内表现出小于2 dB的插入损耗、大于12 dB的回波损耗、小于0.6°的最大相位误差和小于0.1 dB的通道幅度差。
