Angela Varghese Maria, Harshini Deivendran, Imran Predhanekar Mohamed, Bhuvanesh Nattamai S P, Nagarajan Samuthira
Department of Chemistry, Organic Electronics Division, Central University of Tamil Nadu Thiruvarur 610 005 India
Department of Chemistry, Islamiah College Vaniyambadi 635 752 India.
RSC Adv. 2023 Sep 26;13(41):28416-28425. doi: 10.1039/d3ra05685f.
The design and synthesis of ferrocene-functionalized organic small molecules using quinoline cores are rendered to achieve a ternary write-once-read-many (WORM) memory device. Introducing an electron-withdrawing group into the ferrocene system changes the compounds' photophysical, electrochemical, and memory behavior. The compounds were synthesized with and without an acetylene bridge between the ferrocene unit and quinoline. The electrochemical studies proved the oxidation behavior with a slightly less intense reduction peak of the ferrocene unit, demonstrating that quinolines have more reducing properties than ferrocene with bandgaps ranging from 2.67-2.75 eV. The single crystal analysis of the compounds also revealed good interactive interactions, ensuring good molecular packing. This further leads to a ternary WORM memory with oxidation of the ferrocene units and charge transfer in the compounds. The devices exhibit on/off ratios of 10 and very low threshold voltages of -0.58/-1.02 V with stabilities of 10 s and 100 cycles of all the states through retention and endurance tests.
利用喹啉核设计并合成二茂铁功能化有机小分子，旨在实现一种三元一次写入多次读取（WORM）存储器件。在二茂铁体系中引入吸电子基团会改变化合物的光物理、电化学和存储行为。这些化合物在二茂铁单元和喹啉之间有或没有乙炔桥的情况下合成。电化学研究证明了二茂铁单元的氧化行为以及强度稍弱的还原峰，表明喹啉比二茂铁具有更强的还原性质，其带隙范围为2.67 - 2.75 eV。化合物的单晶分析还揭示了良好的相互作用，确保了良好的分子堆积。这进一步导致了一种三元WORM存储，涉及二茂铁单元的氧化和化合物中的电荷转移。通过保持和耐久性测试，该器件的开/关比为10，阈值电压非常低，为-0.58 / -1.02 V，所有状态的稳定性分别为10秒和100次循环。
