Nanoscience Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee 247667, India.
Department of Physics, Graphic Era (Deemed to be University), Dehradun, Uttarakhand 248002, India.
ACS Sens. 2023 Oct 27;8(10):3824-3835. doi: 10.1021/acssensors.3c01290. Epub 2023 Sep 28.
In this report, we investigate the room-temperature gas sensing performance of heterostructure transition metal dichalcogenide (MoSe/MoS, WS/MoS, and WSe/MoS) thin films grown over a silicon substrate using a pulse laser deposition technique. The sensing response of the aforementioned sensors to a low concentration range of NO, NH, H, CO, and HS gases in air has been assessed at room temperature. The obtained results reveal that the heterojunctions of metal dichalcogenide show a drastic change in gas sensing performance compared to the monolayer thin films at room temperature. Nevertheless, the WSe/MoS-based sensor was found to have an excellent selectivity toward NO gas with a particularly high sensitivity of 10 ppb. The sensing behavior is explained on the basis of a change in electrical resistance as well as carrier localization prospects. Favorably, by developing a heterojunction of diselenide and disulfide nanomaterials, one may find a simple way of improving the sensing capabilities of gas sensors at room temperature.
在本报告中，我们研究了通过脉冲激光沉积技术在硅衬底上生长的异质结构过渡金属二卤化物（MoSe/MoS、WS/MoS 和 WSe/MoS）薄膜在室温下对低浓度范围的 NO、NH、H、CO 和 HS 气体的室温气体传感性能。评估了上述传感器对空气中低浓度 NO、NH、H、CO 和 HS 气体的传感响应。结果表明，与室温下的单层薄膜相比，金属二卤化物的异质结在气体传感性能方面表现出剧烈的变化。然而，基于 WSe/MoS 的传感器对 NO 气体表现出优异的选择性，其灵敏度特别高，达到 10ppb。传感行为是基于电阻变化和载流子定位前景来解释的。有利的是，通过开发硒化物和硫化物纳米材料的异质结，可以找到一种简单的方法来提高室温下气体传感器的传感能力。
