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无金属的Janus α-和β-碳化硅颗粒:设计用于水分解的稳定且高效的二维半导体。

Metal-free Janus α- and β-SiCP: designing stable and efficient two-dimensional semiconductors for water splitting.

作者信息

Zhao Yanfu, Zhang Bofeng, Lin Jiahe

机构信息

School of Science, Jimei University, Xiamen, 361021, China.

Semiconductor Industry and Technology Research Institute, Jimei University, Xiamen, 361021, China.

出版信息

Phys Chem Chem Phys. 2023 Oct 11;25(39):26666-26678. doi: 10.1039/d3cp03300g.

Abstract

Two-dimensional (2D) semiconductors exhibit exceptional potential in the field of photocatalytic water splitting due to their unique structural characteristics and photoelectric properties. In this study, based on first-principles density functional theory, we theoretically proposed two SiCP Janus 2D semiconductors with high stability, namely monolayer α- and β-SiCP. By performing the calculation of HSE06 functionals, the band structures of monolayer α- and β-SiCP have been estimated, and the results show that both α- and β-SiCP are direct-band-gap semiconductors with band gaps of 1.64 eV and 1.91 eV, respectively. Meanwhile, the band edge levels of monolayer α- and β-SiCP meet the band structure requirements of photocatalysts in water splitting. Notably, because of the internal build-in electric fields and tiny band gaps, monolayer α- and β-SiCP exhibit separated photogenerated electron-hole pairs and high solar-to-hydrogen (STH) efficiency, reaching up to 33.68% and 23.72%, respectively. Additionally, we also investigate the impact of uniaxial strain on electronic, optical and photocatalytic properties of monolayer α- and β-SiCP considering pH values ranging from 0 to 14. Our results demonstrate that the maximum STH efficiency for α-SiCP is achieved under -direction strain () of 2%, -direction strain () of 8%, and pH values between 2 and 4. Conversely, β-SiCP exhibits the highest STH efficiency under -direction strain () of 8%, -direction strain () of 6%, and pH values between 2 and 4.

摘要

二维(2D)半导体因其独特的结构特性和光电性能,在光催化水分解领域展现出卓越的潜力。在本研究中,基于第一性原理密度泛函理论,我们从理论上提出了两种具有高稳定性的SiCP Janus二维半导体,即单层α - 和β - SiCP。通过进行HSE06泛函计算,估算了单层α - 和β - SiCP的能带结构,结果表明α - 和β - SiCP均为直接带隙半导体,带隙分别为1.64 eV和1.91 eV。同时,单层α - 和β - SiCP的带边能级满足水分解中光催化剂的能带结构要求。值得注意的是,由于内部的内建电场和微小的带隙,单层α - 和β - SiCP表现出分离的光生电子 - 空穴对以及高的太阳能到氢能(STH)效率,分别高达33.68%和23.72%。此外,我们还研究了单轴应变对单层α - 和β - SiCP在pH值范围从0到14时的电子、光学和光催化性能的影响。我们的结果表明,α - SiCP在2%的 - 方向应变()、8%的 - 方向应变()以及pH值在2到4之间时实现了最大的STH效率。相反,β - SiCP在8%的 - 方向应变()、6%的 - 方向应变()以及pH值在2到4之间时表现出最高的STH效率。

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