Feng Ping-Hsuan, Hsiao Kai-Yuan, Jhan Dun-Jie, Chen Yu-Lin, Keng Pei Yuin, Chang Shou-Yi, Lu Ming-Yen
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.
ACS Appl Mater Interfaces. 2023 Oct 18;15(41):48543-48550. doi: 10.1021/acsami.3c10656. Epub 2023 Oct 4.
This study presents the utilization of MoS as a diffusion barrier for metal interconnects, in situ transmission electron microscopy (TEM) observations are employed for comprehensive understanding. The diffusion-blocking ability of MoS is discussed by the diffusion and phase transformation between Ru and Si via TEM diffraction and imaging. When the sample is heated to a high temperature such that MoS loses the ability to block the diffusion, Si diffuses through the MoS into the Ru layer, leading to the formation of RuSi. Both multilayer and monolayer (1L) MoS exhibit exceptional diffusion-blocking ability up to 800 °C. Furthermore, plasma-treated 1L-MoS shows a slightly low diffusion-blocking temperature of 750 °C, while the dangling bonds in MoS improve the interfacial adhesion. These findings suggest that MoS holds great potential as a diffusion barrier for metal interconnects.
本研究展示了二硫化钼（MoS）作为金属互连扩散阻挡层的应用，采用原位透射电子显微镜（TEM）观察以进行全面理解。通过TEM衍射和成像，利用钌（Ru）与硅（Si）之间的扩散和相变来讨论MoS的扩散阻挡能力。当样品加热到高温致使MoS失去阻挡扩散的能力时，Si通过MoS扩散到Ru层中，导致形成RuSi。多层和单层（1L）MoS在高达800°C时均表现出优异的扩散阻挡能力。此外，经等离子体处理的1L-MoS的扩散阻挡温度略低，为750°C，而MoS中的悬空键改善了界面附着力。这些发现表明，MoS作为金属互连的扩散阻挡层具有巨大潜力。
