Gao Wenjiang, Yu Meiyang, Wang Bing, Yin Huabing
Institute for Computational Materials Science, Joint Center for Theoretical Physics, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
Phys Chem Chem Phys. 2023 Oct 25;25(41):28402-28411. doi: 10.1039/d3cp02874g.
Considering the demand for device miniaturization, low-dimensional materials have been widely employed in various fields due to their unique and fascinating physical and chemical properties. Here, based on first-principles calculations, we predict a novel one-dimensional (1D) RhTeI chain system. Our calculations indicate that a 1D RhTeI single chain can be prepared from its bulk counterpart by an exfoliation method and exists stably at room temperature. The 1D RhTeI single chain is a direct semiconductor with a moderate bandgap of 1.75 eV under a strong spin-orbital coupling (SOC) effect dominated by Te. This bandgap can be modulated by the chain number and the application of external strain. Notably, the 1D RhTeI single chain has a high electron mobility (1093 cm V s), which is one to two orders of magnitude higher than those of most previously reported 1D materials. The strong SOC effect can also enhance the visible-light absorption capacity of the 1D RhTeI single chain. The moderate direct bandgap, high electron mobility, excellent visible-light absorption, and strong spin-orbital coupling make 1D RhTeI systems ideal candidates in electronic and optoelectronic devices.