Zhang Guangzheng, Dong Shilin, Wang Xinyu, Xin Gongming
School of Energy and Power Engineering, Shandong University, Jinan 250061, People's Republic of China.
Institute of Thermal Science and Technology, Shandong University, Jinan 250061, People's Republic of China.
Nanotechnology. 2023 Nov 15;35(5). doi: 10.1088/1361-6528/ad06d0.
Two-dimensional (2D) materials have attracted more and more attention due to their excellent properties. In this work, we systematically explore the heat transport properties of Graphene-CB (GRA-CB) superlattices and van der Waals (vdW) heterostructures using molecular dynamics method. The effects of interface types and heat flow directions on the in-plane interfacial thermal resistance (ITR) are analyzed. Obvious thermal rectification is detected in the more energy stable interface, GRA zigzag-CB zigzag (ZZ) interface, which also has the minimum value of ITR. The dependence of the superlattices thermal conductivity () of the ZZ interface on the period length () is investigated. The results show that when theis 3.5 nm, thereaches a minimum value of 35.52 W mK, indicating a transition stage from coherent phonon transport to incoherent phonon transport. Afterwards, the effects of system size, temperature, coupling strength and vacancy defect on the out-of-plane interfacial thermal resistance (ITR) are evaluated. With the increase of temperature, coupling strength and vacancy defect, ITRare found to reduce effectively due to the enhanced Umklapp phonon scattering and increased probability of energy transfer. Phonon density of states and phonon participation ratio is evaluated to reveal phonon behavior during heat transport. This work is expected to provide essential guidance for the thermal management of nanoelectronics based on 2D monolayer GRA and CB.
二维(2D)材料因其优异的性能而受到越来越多的关注。在这项工作中,我们使用分子动力学方法系统地探索了石墨烯-炭黑(GRA-CB)超晶格和范德华(vdW)异质结构的热输运特性。分析了界面类型和热流方向对平面内界面热阻(ITR)的影响。在能量更稳定的界面,即GRA锯齿形-CB锯齿形(ZZ)界面中检测到明显的热整流现象,该界面的ITR也具有最小值。研究了ZZ界面的超晶格热导率()对周期长度()的依赖性。结果表明,当为3.5 nm时,达到最小值35.52 W mK,表明从相干声子输运到非相干声子输运的转变阶段。之后,评估了系统尺寸、温度、耦合强度和空位缺陷对平面外界面热阻(ITR)的影响。随着温度、耦合强度和空位缺陷的增加,由于Umklapp声子散射增强和能量转移概率增加,ITR被发现有效降低。评估了声子态密度和声子参与率,以揭示热输运过程中的声子行为。这项工作有望为基于二维单层GRA和CB的纳米电子器件的热管理提供重要指导。