Effect of A- or B-Site Sc Doping on Sintering Temperature, Crystal Structure, Microstructure, and Properties of BaZrTiO Ceramics.

作者信息

Zhang Kaituo, Li Tiantian, Xu Yuan

机构信息

Henan Key Laboratory of Wire and Cable Structures and Materials, School of Cable Engineering, Henan Institute of Technology, Xinxiang 453003, China.

Engineering Technology Education Center, Henan Institute of Technology, Xinxiang 453003, China.

出版信息

Materials (Basel). 2023 Oct 11;16(20):6635. doi: 10.3390/ma16206635.

DOI:10.3390/ma16206635

PMID:37895617

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10608409/

Abstract

BaZrTiO (BZT) ceramics with different concentrations of Sc ions were prepared, and the effect of doping concentration on the crystal substitution type of BZT was studied. The substitution position of the Sc ion in BZT was related to its concentration. When the concentration of Sc ions was low (<1.0 mol %), it showed B-site substitution; otherwise, Sc ions showed A-site substitution. In addition, the effects of the Sc ion concentration on the sintering temperature, crystal structure, microstructure, and properties of BZT were also studied. The results showed that the introduction of Sc ions can reduce the sintering temperature to 1250 °C. When the concentration of Sc ions was 1.0 mol % and 2.0 mol %, the high dielectric constants of BZT were 14,273 and 12,747, respectively.

摘要