Almoussawi Batoul, Sen Smritijit, Saitzek Sébastien, Roussel Pascal, Kabbour Houria
Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181,Unité de Catalyse et Chimie du Solide (UCCS), F-59000 Lille, France.
Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), F-62300 Lens, France.
Inorg Chem. 2023 Nov 20;62(46):18970-18981. doi: 10.1021/acs.inorgchem.3c02592. Epub 2023 Nov 6.
The new thioapatite Ba(VOS)X (X = F, Cl, I) series of compounds was prepared and characterized. Compared to known apatite phases built from unconnected vanadate VO groups separated by Ba cations delimiting halide-filled channels, their crystal structure is built from mixed anion thiovanadate VOS, where V is surrounded by both O and S, therefore exhibiting a triple anion lattice. Here, the strategy consisting in incorporating a chalcogenide anion aims at raising the valence band to bring the band gap to the visible range in order to reach photoactive materials under visible light. Both the halide anion nature and the S/O ratio impact the materials' photoconductivity. While the photocurrent response is comparable to that found in the recently investigated apatite phase Pb(VO)I, a short carrier lifetime is detected as well as a shift of the activity toward the visible light. This apatite series combining thiovanadate and halide-filled channels opens new perspectives in the extended field of apatites and their applications.
制备并表征了新型硫代磷灰石Ba(VOS)X（X = F、Cl、I）系列化合物。与由被Ba阳离子分隔的不相连的钒酸盐VO基团构成的已知磷灰石相相比，后者限定了填充卤化物的通道，而它们的晶体结构由混合阴离子硫代钒酸盐VOS构成，其中V被O和S包围，因此呈现出三阴离子晶格。在此，掺入硫族化物阴离子的策略旨在提高价带，使带隙达到可见光范围，以便在可见光下获得光活性材料。卤化物阴离子的性质和S/O比都会影响材料的光电导率。虽然光电流响应与最近研究的磷灰石相Pb(VO)I中的相当，但检测到载流子寿命较短，且活性向可见光方向偏移。这种结合硫代钒酸盐和填充卤化物通道的磷灰石系列在磷灰石及其应用的扩展领域开辟了新的前景。
