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二铵间隔基诱导的稳定之字形二维狄翁-雅各布森铅/锡基钙钛矿太阳能电池。

Diammonium spacer-induced stable zigzag type 2D Dion-Jacobson lead/tin-based perovskite solar cells.

作者信息

Jung Mi-Hee

机构信息

Department of Nanotechnology and Advanced Materials Engineering, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.

出版信息

Dalton Trans. 2023 Nov 28;52(46):17258-17272. doi: 10.1039/d3dt02041j.

Abstract

Hybrid halide two dimensional (2D) perovskites have attracted considerable attention because they exhibit an improvement in perovskite solar cells compared with their 3D analogs. However, their bulky organic space group, leading to higher bandgaps and exciton binding energy, limits the charge transport in solar cells. Herein, the 3-(aminomethyl)pyridinium (3API, CHNI) dication is incorporated into FA(PbSn)I to develop zigzag type 2D Dion-Jacobson-phase perovskites, which have low band gaps in the range of 1.44 to 1.53 eV for concentrations from 5 mol% to 20 mol% due to structural distortion. The introduction of the 3API cation increases the carrier conductivity and produces a high-quality perovskite film with no pinhole and connected grains, which is favorable for efficient carrier transport. Consequently, solar cells employing FA(PbSn)I with 10 mol% 3API added as a light absorber achieve a power conversion efficiency of 5.46% with an open-circuit voltage of 0.47 V, a fill factor of 58.07% and a short-circuit current density of 20.18 mA cm. With this class of new 2D Dion-Jacobson perovskite compositions, this work suggests potential future directions for improving the performance and device stability of perovskite solar cells.

摘要

混合卤化物二维(2D)钙钛矿因其与三维同类物相比在钙钛矿太阳能电池中表现出性能提升而备受关注。然而,其庞大的有机空间群导致带隙和激子结合能更高,限制了太阳能电池中的电荷传输。在此,将3-(氨甲基)吡啶鎓(3API,CHNI)双阳离子掺入FA(PbSn)I中,以开发之字形二维狄昂-雅各布森相钙钛矿,由于结构畸变,其在5 mol%至20 mol%的浓度范围内具有1.44至1.53 eV的低带隙。3API阳离子的引入提高了载流子电导率,并产生了无针孔且晶粒相连的高质量钙钛矿薄膜,这有利于高效的载流子传输。因此,采用添加了10 mol% 3API的FA(PbSn)I作为光吸收剂的太阳能电池实现了5.46%的功率转换效率,开路电压为0.47 V,填充因子为58.07%,短路电流密度为20.18 mA/cm²。通过这类新型二维狄昂-雅各布森钙钛矿组合物,这项工作为提高钙钛矿太阳能电池的性能和器件稳定性指明了潜在的未来方向。

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