Fatima Muneeba, Hasan Muhammad Sajjad Ul, Akhtar Maria, Morley Nicola, Amin Nasir, Rehman Atta Ur, Arshad Muhammad Imran, Amami Mongi, Yaqub Bisma, Ezzine Safa
Department of Physics, Government College University, Faisalabad 38000, Pakistan.
Department of Physics, The University of Lahore, Lahore 54000, Pakistan.
ACS Omega. 2023 Oct 25;8(44):41169-41181. doi: 10.1021/acsomega.3c03993. eCollection 2023 Nov 7.
Cerium (Ce) substitution in Cu-Cd spinel nanoferrites with the compositional formula CuCdFeCeO ( = 0.0, 0.0125, 0.0250, 0.0375, 0.050) was performed by the hydrothermal route. The structural, morphological, optical, electrical, and dielectric properties of Ce-substituted Cu-Cd ferrites were explored. X-ray diffraction revealed the single-phase cubic structure of all nanoferrites. The average crystallite size (72.42-11.61 nm) and lattice constant (8.419-8.449 Å) were observed for the synthesized ferrites. The surface shapes of particles were determined by scanning electron microscopy. The substitution was also verified by Fourier transform infrared spectroscopy and ultraviolet-visible spectrophotometry. The semiconducting behavior of ferrites was determined from their electrical properties, such as direct current (DC) electrical resistivity. The Curie temperature was observed at 523 K temperature for all nanoferrites. The dielectric constant and dielectric loss significantly indicated the reducing behavior with an increase in the cerium concentration. The sample CuCdFeCeO resulted in the lowest optical bandgap energy, DC resistivity, and dielectric losses. The nature of the electrical resistivity and dielectric constants indicate that the designed materials are highly appropriate for the design of microwave gadgets.
通过水热法对化学式为CuCdFeCeO（ = 0.0、0.0125、0.0250、0.0375、0.050）的Cu-Cd尖晶石纳米铁氧体进行铈（Ce）取代。研究了Ce取代的Cu-Cd铁氧体的结构、形态、光学、电学和介电性能。X射线衍射表明所有纳米铁氧体均为单相立方结构。观察到合成铁氧体的平均晶粒尺寸（72.42 - 11.61 nm）和晶格常数（8.419 - 8.449 Å）。通过扫描电子显微镜确定颗粒的表面形状。还通过傅里叶变换红外光谱和紫外可见分光光度法验证了取代情况。从其电学性质如直流（DC）电阻率确定铁氧体的半导体行为。观察到所有纳米铁氧体在523 K温度下的居里温度。介电常数和介电损耗显著表明随着铈浓度的增加而降低的行为。样品CuCdFeCeO导致最低的光学带隙能量、直流电阻率和介电损耗。电阻率和介电常数的性质表明所设计的材料非常适合用于微波器件的设计。
