Kalateh Asiyeh, Jalali Ali, Kamali Ashtiani Mohammad Javad, Mohammadimasoudi Mohammad, Bastami Hajieh, Mohseni Majid
Electrical Engineering Department, Shahid Beheshti University, Tehran, Iran.
Physics Department, Shahid Beheshti University, Tehran, Iran.
Sci Rep. 2023 Nov 16;13(1):20036. doi: 10.1038/s41598-023-45790-0.
Designing and manufacturing memristor devices with simple and less complicated methods is highly promising for their future development. Here, an Ag/SnO/FTO(F-SnO) structure is used through the deposition of the SnO layer attained by its sol via the air-brush method on an FTO substrate. This structure was investigated in terms of the memristive characteristics. The negative differential resistance (NDR) effect was observed in environment humidity conditions. In this structure, valance change memory and electrometalization change memory mechanisms cause the current peak in the NDR region by forming an OH conductive filament. In addition, the photoconductivity effect was found under light illumination and this structure shows the positive photoconductance effect by increasing the conductivity. Memristivity was examined for up to 100 cycles and significant stability was observed as a valuable advantage for neuromorphic computing. Our study conveys a growth mechanism of an optical memristor that is sensitive to light and humidity suitable for sensing applications.
采用简单且不太复杂的方法设计和制造忆阻器器件对其未来发展极具前景。在此，通过用喷枪法将其溶胶获得的SnO层沉积在FTO衬底上，使用了Ag/SnO/FTO（F - SnO）结构。对该结构的忆阻特性进行了研究。在环境湿度条件下观察到了负微分电阻（NDR）效应。在这种结构中，价态变化记忆和电金属化变化记忆机制通过形成OH导电细丝在NDR区域引起电流峰值。此外，在光照下发现了光电导效应，并且该结构通过提高电导率显示出正光电导效应。对忆阻率进行了多达100次循环的测试，观察到显著的稳定性，这是神经形态计算的一个宝贵优势。我们的研究传达了一种对光和湿度敏感的光学忆阻器的生长机制，适用于传感应用。
