Nguyen Thi Bich Ngoc, Ha Chu Viet, Thi Ha Lien Nghiem, Guerrero-Sanchez J, Hoat D M
Institute of Physics, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam.
Faculty of Physics, TNU-University of Education, Thai Nguyen, 250000, Vietnam.
Phys Chem Chem Phys. 2023 Dec 6;25(47):32569-32577. doi: 10.1039/d3cp02115g.
In this work, the stability, and electronic and magnetic properties of pristine and doped graphene-like ionic NaX (X = F and Cl) monolayers are explored using first-principles calculations. The good stability of NaF and NaCl monolayers is confirmed by phonon dispersion curves and molecular dynamics simulations. Electronic structure calculations show their insulator nature with large indirect band gaps of 5.43 (7.26) and 5.06 (6.32) eV as calculated with the PBE (HSE06) functional, respectively. In addition, their ionic character is also demonstrated. Furthermore, a doping approach is explored to functionalize NaX monolayers for spintronic applications. For such a goal, IIA- and VIA-group atoms are selected as dopants due to their dissimilar valence electronic configuration as compared with the host atoms. The results indicate the emergence of magnetic semiconductor nature with a total magnetic moment of 1. Herein, magnetic properties are produced mainly by the dopant atoms, which induce new middle-gap energy states around the Fermi level. Finally, the effects of codoping the NaF monolayer with Ca and O and NaCl with Ba and O are also examined. Adjacent Ca-O and Ba-O pairs preserve the non-magnetic nature. Further separating dopants leads to the emergence of magnetic semiconductor behavior, with lower magnetization than separate doping. This work introduces new ionic 2D materials for optoelectronic and spintronic applications, contributing to the research effort to find out new 2D multifunctional materials.
在这项工作中,我们使用第一性原理计算方法,探究了原始的以及掺杂的类石墨烯离子型NaX(X = F和Cl)单层的稳定性、电学和磁学性质。通过声子色散曲线和分子动力学模拟,证实了NaF和NaCl单层具有良好的稳定性。电子结构计算表明,使用PBE(HSE06)泛函计算得到,它们具有绝缘体性质,间接带隙分别为5.43(7.26)和5.06(6.32)eV。此外,还证明了它们的离子特性。此外,还探索了一种掺杂方法,以使NaX单层功能化用于自旋电子学应用。为了实现这一目标,选择IIA族和VIA族原子作为掺杂剂,因为它们与主体原子的价电子构型不同。结果表明出现了具有1个总磁矩的磁性半导体性质。在此,磁性主要由掺杂原子产生,这些原子在费米能级附近诱导出新的中间能隙态。最后,还研究了用Ca和O共掺杂NaF单层以及用Ba和O共掺杂NaCl单层的效果。相邻的Ca - O和Ba - O对保持非磁性性质。进一步分离掺杂剂会导致出现磁性半导体行为,其磁化强度低于单独掺杂。这项工作为光电子学和自旋电子学应用引入了新的离子二维材料,有助于寻找新型二维多功能材料的研究工作。