Boldyrev Kirill N, Sektarov Eduard S, Bolshakov Andrey P, Ralchenko Victor G, Sedov Vadim S
Institute of Spectroscopy of the Russian Academy of Sciences, Troitsk, Moscow 108840, Russia.
Higher School of Economics, Moscow 101000, Russia.
Philos Trans A Math Phys Eng Sci. 2024 Jan 22;382(2265):20230170. doi: 10.1098/rsta.2023.0170. Epub 2023 Dec 4.
The neutrally charged silicon-vacancy defect (SiV) is a colour centre in diamond with spin S = 1, a zero-phonon line (ZPL) at 946 nm and long spin coherence, which makes it a promising candidate for quantum network applications. For the proper performance of such colour centres, all of them must have identical optical characteristics. However, in practice, there are factors that influence each individual centre. One of these factors is non-uniform isotope composition for both carbon atoms in diamond lattice and silicon atoms of dopant. In this work, we studied the isotopic shifts of SiV centres for CVD-grown epitaxial layers of isotopically enriched C and C diamonds, as well as for diamond with natural isotope composition but doped only with one isotope of Si (Si, Si and Si). The detected shift was 1.60 meV for C/C couple and 0.33 meV for Si/Si and Si/Si couples, which are close to the previously obtained values of the isotopic shift for the negatively charged silicon vacancy (SiV), which indicates a similar model of interaction with the environment for these two charge states of the SiV colour centres. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.
中性电荷的硅空位缺陷（SiV）是金刚石中的一种色心，其自旋S = 1，零声子线（ZPL）位于946 nm处，且具有长自旋相干性，这使其成为量子网络应用的一个有前途的候选者。为了使这些色心正常发挥作用，它们都必须具有相同的光学特性。然而，在实际中，存在一些影响每个单独色心的因素。其中一个因素是金刚石晶格中的碳原子和掺杂剂的硅原子的同位素组成不均匀。在这项工作中，我们研究了化学气相沉积（CVD）生长的同位素富集的C和C金刚石外延层以及具有天然同位素组成但仅掺杂一种硅同位素（Si、Si和Si）的金刚石中SiV中心的同位素位移。对于C/C对，检测到的位移为1.60 meV，对于Si/Si和Si/Si对，检测到的位移为0.33 meV，这与先前获得的带负电荷的硅空位（SiV）的同位素位移值相近，这表明SiV色心的这两种电荷状态与环境的相互作用模型相似。本文是西奥·墨菲会议特刊“用于量子应用的金刚石”的一部分。
