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高迁移率拓扑半金属作为巨磁阻效应和新型量子霍尔效应的新型材料

High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect.

作者信息

Zivieri Roberto, Lumetti Stefano, Létang Jérémy

机构信息

Consorzio Futuro in Ricerca (CFR), 44122 Ferrara, Italy.

Silicon Austria Labs, 9524 Villach, Austria.

出版信息

Materials (Basel). 2023 Dec 9;16(24):7579. doi: 10.3390/ma16247579.

Abstract

The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials-the topological semimetals-has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.

摘要

近几十年来,对固态材料的电学和磁输运性质进行定量描述一直是材料科学领域一项重大挑战。最近,一类新型材料——拓扑半金属——的发现,引发了人们对全面理解其磁输运性质的日益浓厚兴趣。在这篇综述中,讨论了最近发现的高载流子迁移率拓扑半金属中拓扑、能带结构和载流子迁移率之间的强相互作用,并概述了它们对磁输运性质的影响。综述了它们的大磁阻效应,特别是在霍尔横向配置中的效应,以及在高迁移率外尔和狄拉克半金属中观察到的三维量子霍尔效应的新版本。还研究了基于固态半金属设计新型量子传感器和器件的可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7515/10744697/c799457b2600/materials-16-07579-g005.jpg

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