Department of Physics, University of Colorado, Boulder, CO 80309.
Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371.
Proc Natl Acad Sci U S A. 2018 Oct 16;115(42):10570-10575. doi: 10.1073/pnas.1808747115. Epub 2018 Oct 3.
The rapidly expanding class of quantum materials known as topological semimetals (TSMs) displays unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. So far, many possible sources of extraordinarily large nonsaturating magnetoresistance have been proposed. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility (χ), the tangent of the Hall angle ([Formula: see text]), along with magnetoresistance in four different nonmagnetic semimetals with high mobilities, NbP, TaP, NbSb, and TaSb, all of which exhibit nonsaturating large magnetoresistance (MR). We find that the distinctly different temperature dependences, [Formula: see text], and the values of [Formula: see text] in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP are uncompensated semimetals with linear dispersion, in which the nonsaturating magnetoresistance arises due to guiding center motion, while NbSb and TaSb are compensated semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous nonsaturating large magnetoresistance in TSMs.
被称为拓扑半金属 (TSM) 的快速扩展的量子材料类别显示出独特的传输特性,包括电阻率对外加磁场的显著依赖性,这在科学和技术方面都有很大的兴趣。到目前为止,已经提出了许多可能的来源来产生非常大的非饱和磁阻。然而,能够识别或辨别主导机制并与现有理论联系起来的实验特征却很少。在这里,我们展示了在四个具有高迁移率的非磁性半金属中,磁导率 (χ)、霍尔角的正切 ([Formula: see text]) 以及磁阻随温度的变化关系,这四个非磁性半金属分别是 NbP、TaP、NbSb 和 TaSb,它们都表现出非饱和的大磁阻 (MR)。我们发现,磷化物和锑酸盐中截然不同的温度依赖性、[Formula: see text] 和 [Formula: see text] 的值可以作为经验标准,将 MR 按不同的起源进行分类:NbP 和 TaP 是未补偿的半导体,具有线性色散,其中非饱和磁阻是由于引导中心运动引起的,而 NbSb 和 TaSb 是补偿半导体,磁阻是由两个二次能带的近乎完美的电荷补偿产生的。我们的结果说明了如何结合磁输运和磁化率测量来对 TSM 中越来越普遍的非饱和大磁阻进行分类。