• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

相似文献

1
Nonsaturating large magnetoresistance in semimetals.半导体中的非饱和巨磁电阻。
Proc Natl Acad Sci U S A. 2018 Oct 16;115(42):10570-10575. doi: 10.1073/pnas.1808747115. Epub 2018 Oct 3.
2
Large nonsaturating magnetoresistance and signature of nondegenerate Dirac nodes in ZrSiS.ZrSiS中的大非饱和磁阻和非简并狄拉克节点特征
Proc Natl Acad Sci U S A. 2017 Mar 7;114(10):2468-2473. doi: 10.1073/pnas.1618004114. Epub 2017 Feb 21.
3
Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates.载流子双谷输运诱导的朗道能级劈裂和 Cd3As2 纳米片中的大可调磁电阻
ACS Nano. 2016 Jun 28;10(6):6020-8. doi: 10.1021/acsnano.6b01568. Epub 2016 May 16.
4
High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect.高迁移率拓扑半金属作为巨磁阻效应和新型量子霍尔效应的新型材料
Materials (Basel). 2023 Dec 9;16(24):7579. doi: 10.3390/ma16247579.
5
Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance.由贝里曲率单极子主导的大线性正磁阻的标度
Proc Natl Acad Sci U S A. 2022 Nov 8;119(45):e2208505119. doi: 10.1073/pnas.2208505119. Epub 2022 Nov 2.
6
Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe.电荷补偿诱导薄WTe₂中产生大磁阻的直接证据
Nano Lett. 2019 Jun 12;19(6):3969-3975. doi: 10.1021/acs.nanolett.9b01275. Epub 2019 May 15.
7
Magnetotransport properties of compensated semimetal HfB with high-density light carriers.具有高密度轻载流子的补偿半金属HfB的磁输运性质
J Phys Condens Matter. 2020 Jan 1;32(1):015601. doi: 10.1088/1361-648X/ab439e. Epub 2019 Sep 11.
8
Evolution of the Fermi surface of Weyl semimetals in the transition metal pnictide family.过渡金属磷化物家族中 Weyl 半金属费米表面的演化。
Nat Mater. 2016 Jan;15(1):27-31. doi: 10.1038/nmat4457. Epub 2015 Nov 2.
9
Single crystal growth and physical properties of layered compound SrCdBi.
J Phys Condens Matter. 2022 Jun 6;34(31). doi: 10.1088/1361-648X/ac718d.
10
Relativistic mechanism of chiral magnetic current in Weyl semimetals with tilted dispersion.具有倾斜色散的外尔半金属中手征磁流的相对论机制。
J Phys Condens Matter. 2020 Mar 13;32(11):115502. doi: 10.1088/1361-648X/ab5bd5. Epub 2019 Nov 26.

引用本文的文献

1
The inadequacy of the ρ-T curve for phase transitions in the presence of magnetic fields.在存在磁场的情况下,用于相变的ρ-T曲线的不足之处。
Innovation (Camb). 2025 Feb 10;6(5):100837. doi: 10.1016/j.xinn.2025.100837. eCollection 2025 May 5.
2
Magnetoresistive-coupled transistor using the Weyl semimetal NbP.使用外尔半金属NbP的磁阻耦合晶体管。
Nat Commun. 2024 Jan 24;15(1):710. doi: 10.1038/s41467-024-44961-5.
3
Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance.由贝里曲率单极子主导的大线性正磁阻的标度
Proc Natl Acad Sci U S A. 2022 Nov 8;119(45):e2208505119. doi: 10.1073/pnas.2208505119. Epub 2022 Nov 2.
4
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects.基于低对称性二维材料的面内各向异性电子学:进展与展望。
Nanoscale Adv. 2019 Dec 6;2(1):109-139. doi: 10.1039/c9na00623k. eCollection 2020 Jan 22.
5
Positive Magnetoresistance and Chiral Anomaly in Exfoliated Type-II Weyl Semimetal -WTe.剥离型II型外尔半金属-WTe₂中的正磁阻和手征反常
Nanomaterials (Basel). 2021 Oct 18;11(10):2755. doi: 10.3390/nano11102755.
6
Orbit topology analyzed from π phase shift of magnetic quantum oscillations in three-dimensional Dirac semimetal.从三维狄拉克半金属中磁量子振荡的π相移分析轨道拓扑结构。
Proc Natl Acad Sci U S A. 2021 Jul 20;118(29). doi: 10.1073/pnas.2023027118.
7
Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy.通过维度限制和异质外延调节半金属性来控制磁阻。
Sci Adv. 2021 Apr 14;7(16). doi: 10.1126/sciadv.abe8971. Print 2021 Apr.
8
Observation of gapped state in rare-earth monopnictide HoSb.稀土单磷化物 HoSb 中能隙态的观测
Sci Rep. 2020 Jul 31;10(1):12961. doi: 10.1038/s41598-020-69414-z.
9
Experimental observation of drumhead surface states in SrAs.SrAs中鼓膜表面态的实验观察
Sci Rep. 2020 Feb 17;10(1):2776. doi: 10.1038/s41598-020-59200-2.

本文引用的文献

1
Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.YSb中极端磁阻的独特电子结构。
Phys Rev Lett. 2016 Dec 23;117(26):267201. doi: 10.1103/PhysRevLett.117.267201.
2
Compensated Semimetal LaSb with Unsaturated Magnetoresistance.具有不饱和磁阻的补偿半金属锑化镧
Phys Rev Lett. 2016 Sep 16;117(12):127204. doi: 10.1103/PhysRevLett.117.127204.
3
Anomalous electronic structure and magnetoresistance in TaAs2.二砷化钽中的反常电子结构与磁电阻
Sci Rep. 2016 Jun 7;6:27294. doi: 10.1038/srep27294.
4
Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP.在 Weyl 半金属 TaP 中没有明确手性的负磁阻。
Nat Commun. 2016 May 17;7:11615. doi: 10.1038/ncomms11615.
5
Experimental discovery of a topological Weyl semimetal state in TaP.实验发现 TaP 中的拓扑魏尔半金属态。
Sci Adv. 2015 Nov 13;1(10):e1501092. doi: 10.1126/sciadv.1501092. eCollection 2015 Nov.
6
Linear magnetoresistance caused by mobility fluctuations in n-doped Cd(3)As(2).n 型掺杂 Cd(3)As(2)中迁移率涨落引起的线性磁电阻。
Phys Rev Lett. 2015 Mar 20;114(11):117201. doi: 10.1103/PhysRevLett.114.117201. Epub 2015 Mar 19.
7
Anisotropic giant magnetoresistance in NbSb2.二锑化铌中的各向异性巨磁阻效应
Sci Rep. 2014 Dec 5;4:7328. doi: 10.1038/srep07328.
8
Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2.在狄拉克半金属 Cd3As2 中具有超高迁移率和巨大磁电阻。
Nat Mater. 2015 Mar;14(3):280-4. doi: 10.1038/nmat4143. Epub 2014 Nov 24.
9
Large, non-saturating magnetoresistance in WTe2.WTe2 中的大非饱和磁电阻。
Nature. 2014 Oct 9;514(7521):205-8. doi: 10.1038/nature13763. Epub 2014 Sep 14.
10
Classical and quantum routes to linear magnetoresistance.线性磁阻的经典与量子途径。
Nat Mater. 2008 Sep;7(9):697-700. doi: 10.1038/nmat2259.

半导体中的非饱和巨磁电阻。

Nonsaturating large magnetoresistance in semimetals.

机构信息

Department of Physics, University of Colorado, Boulder, CO 80309.

Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371.

出版信息

Proc Natl Acad Sci U S A. 2018 Oct 16;115(42):10570-10575. doi: 10.1073/pnas.1808747115. Epub 2018 Oct 3.

DOI:10.1073/pnas.1808747115
PMID:30282733
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6196486/
Abstract

The rapidly expanding class of quantum materials known as topological semimetals (TSMs) displays unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. So far, many possible sources of extraordinarily large nonsaturating magnetoresistance have been proposed. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility (χ), the tangent of the Hall angle ([Formula: see text]), along with magnetoresistance in four different nonmagnetic semimetals with high mobilities, NbP, TaP, NbSb, and TaSb, all of which exhibit nonsaturating large magnetoresistance (MR). We find that the distinctly different temperature dependences, [Formula: see text], and the values of [Formula: see text] in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP are uncompensated semimetals with linear dispersion, in which the nonsaturating magnetoresistance arises due to guiding center motion, while NbSb and TaSb are compensated semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous nonsaturating large magnetoresistance in TSMs.

摘要

被称为拓扑半金属 (TSM) 的快速扩展的量子材料类别显示出独特的传输特性,包括电阻率对外加磁场的显著依赖性,这在科学和技术方面都有很大的兴趣。到目前为止,已经提出了许多可能的来源来产生非常大的非饱和磁阻。然而,能够识别或辨别主导机制并与现有理论联系起来的实验特征却很少。在这里,我们展示了在四个具有高迁移率的非磁性半金属中,磁导率 (χ)、霍尔角的正切 ([Formula: see text]) 以及磁阻随温度的变化关系,这四个非磁性半金属分别是 NbP、TaP、NbSb 和 TaSb,它们都表现出非饱和的大磁阻 (MR)。我们发现,磷化物和锑酸盐中截然不同的温度依赖性、[Formula: see text] 和 [Formula: see text] 的值可以作为经验标准,将 MR 按不同的起源进行分类:NbP 和 TaP 是未补偿的半导体,具有线性色散,其中非饱和磁阻是由于引导中心运动引起的,而 NbSb 和 TaSb 是补偿半导体,磁阻是由两个二次能带的近乎完美的电荷补偿产生的。我们的结果说明了如何结合磁输运和磁化率测量来对 TSM 中越来越普遍的非饱和大磁阻进行分类。