Ren Jing, Tang Shiyu, Guo Changqing, Wang Jing, Huang Houbing
School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China.
Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China.
ACS Appl Mater Interfaces. 2024 Jan 10;16(1):1074-1081. doi: 10.1021/acsami.3c14561. Epub 2023 Dec 27.
With the trend of device miniaturization, ultrathin ferroelectric films are gaining more and more attention. However, understanding ferroelectricity in this nanoscale context remains a formidable challenge, primarily due to the heightened relevance of surface effects, which often leads to the loss of net polarization. Here, the influence of surface effects on the polarization as a function of thickness in ultrathin BiFeO films is investigated using phase-field simulations. The findings reveal a notable increase in ferroelectric polarization with increasing thickness, with a particularly discernible change occurring below the 10 nm threshold. Upon accounting for surface effects, the polarization is marginally lower than the case without such considerations, with the disparity becoming more pronounced at smaller thicknesses. Moreover, the hysteresis loop and butterfly loop of the ultrathin film were simulated, demonstrating that the ferroelectric properties of films remain robust even down to a thickness of 5 nm. Our investigations provide valuable insights into the significance of ferroelectric thin films in device miniaturization.
随着器件小型化的趋势,超薄铁电薄膜越来越受到关注。然而,在这种纳米尺度背景下理解铁电性仍然是一项艰巨的挑战,主要是因为表面效应的相关性增强,这常常导致净极化的丧失。在此,使用相场模拟研究了表面效应在超薄BiFeO薄膜中对极化随厚度变化的影响。研究结果表明,随着厚度增加,铁电极化显著增加,在10nm阈值以下出现特别明显的变化。考虑表面效应后,极化略低于不考虑此类效应的情况,且在较小厚度下差异更为明显。此外,还模拟了超薄薄膜的磁滞回线和蝴蝶回线,表明即使薄膜厚度低至5nm,其铁电性能仍然稳健。我们的研究为铁电薄膜在器件小型化中的重要性提供了有价值的见解。