Zhang Ruian, Lin Chen, Dong Hongliang, Han Haojie, Song Yu, Sun Yiran, Wang Yue, Zhang Zijun, Miao Xiaohe, Wu Yongjun, Ren Zhe, Zeng Qiaoshi, Huang Houbing, Ma Jing, Tian He, Ren Zhaohui, Han Gaorong
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, 310051, China.
Nat Commun. 2025 Jan 2;16(1):98. doi: 10.1038/s41467-024-55411-7.
The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZrTiO films with a continuous gradient of Zr concentration, realized by a competitive growth at ~220 °C. These intriguing films demonstrate a frequency-independent of dielectric permittivity below 100 kHz from room-temperature to 280 °C. In particular, the permittivity of the films can be largely regulated from 100 to 50 by slightly varying Zr compositional gradient. These results were revealed to arise from a built-in electric field within the films due to a coupling between the composition gradient and unidirectional spontaneous polarization. Our findings may pave a way to prepare compositionally-graded ferroelectric films by a solution approach, which is promising for practical dielectric, pyroelectric and photoelectric technical applications.
铁电氧化物薄膜的成分对于优化其性能和器件性能起着决定性作用。因此，人们非常希望通过一种简便的方法来控制这些薄膜中的成分分布。在这项工作中，我们报道了一种通过在约220°C下竞争生长实现的具有连续Zr浓度梯度的PbZrTiO薄膜的溶液外延生长。这些引人注目的薄膜在室温至280°C范围内，在低于100kHz的频率下表现出与频率无关的介电常数。特别是，通过略微改变Zr成分梯度，薄膜的介电常数可以在很大范围内从100调节到50。这些结果表明，由于成分梯度与单向自发极化之间的耦合，薄膜内部产生了一个内建电场。我们的发现可能为通过溶液法制备成分渐变的铁电薄膜铺平道路，这对于实际的介电、热释电和光电技术应用具有广阔前景。
