Zhang Yongfeng, Liu Shuainan, Xu Ruiliang, Ruan Shengping, Liu Caixia, Ma Yan, Li Xin, Chen Yu, Zhou Jingran
College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China.
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Nanotechnology. 2024 Jan 30;35(16). doi: 10.1088/1361-6528/ad18e7.
-GaOhas been widely investigated for its stability and thermochemical properties. However, the preparation of-GaOthin films requires complex growth techniques and high growth temperatures, and this has hindered the application of-GaOthin films. In this study,-GaOthin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based on-GaOwith a photocurrent of 2.54 × 10A and a dark current of 1.19 × 10A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between NbC and GaOto create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W) and good stability. Thus, the NbC/-GaOheterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.
氧化镓因其稳定性和热化学性质而受到广泛研究。然而，氧化镓薄膜的制备需要复杂的生长技术和较高的生长温度，这阻碍了氧化镓薄膜的应用。在本研究中，采用绿色方法制备了具有良好晶体质量的氧化镓薄膜，并开发了一种基于氧化镓的紫外探测器，其光电流为2.54×10⁻⁵A，暗电流为1.19×10⁻⁸A。二维材料因其高导电性已成为光电器件应用的优质材料。在此，我们利用碳化铌和氧化镓之间合适的能带结构来创建高载流子迁移势垒，这使得器件的暗电流降低了一个数量级。此外，该器件具有日盲探测、高响应度（28 A/W）和良好的稳定性。因此，碳化铌/氧化镓异质结有望成为紫外光电探测领域中有前景的器件之一。
