Kim Da Hee, Shin Dong Hee, Lee Hosun
Department of Applied Physics, Kyung Hee University, Yongin 17104, Republic of Korea.
Education Institute for Frontier, Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea.
Nanotechnology. 2024 Jan 24;35(15). doi: 10.1088/1361-6528/ad1945.
Two-dimensional (2D) semiconductor and LaVOmaterials with high absorption coefficients in the visible light region are attractive structures for high-performance photodetector (PD) applications. Insulating 2D hexagonal boron nitride (h-BN) with a large band gap and excellent transmittance is a very attractive material as an interface between 2D/semiconductor heterostructures. We first introduce WS/h-BN/LaVOsemitransparent PD. The photo-current/dark current ratio of the device exhibits a delta-function characteristic of 4 × 10at 0 V, meaning 'self-powered'. The WS/h-BN/LaVOPD shows up to 0.27 A Wresponsivity () and 4.6 × 10cm HzWdetectivity () at 730 nm. Especially, it was confirmed that the performance improved by about 5 times compared to the WS/LaVOdevice at zero bias. Additionally, it is suggested that the PD maintains 87% of its initialfor 2000 h under the atmosphere with a temperature of 25 °C and humidity of 30%. Based on the above results, we suggest that the WS/h-BN/LaVOheterojunction is promising as a self-powered optoelectronic device.
二维（2D）半导体和在可见光区域具有高吸收系数的镧钒材料是用于高性能光电探测器（PD）应用的有吸引力的结构。具有大带隙和优异透光率的绝缘二维六方氮化硼（h-BN）作为二维/半导体异质结构之间的界面是一种非常有吸引力的材料。我们首先介绍WS/h-BN/LaVO半透明光电探测器。该器件的光电流/暗电流比在0 V时呈现4×10的三角波函数特性，意味着“自供电”。WS/h-BN/LaVO光电探测器在730 nm处显示出高达0.27 A W的响应度（）和4.6×10 cm Hz W的探测率（*）。特别是，证实了在零偏压下，其性能比WS/LaVO器件提高了约5倍。此外，建议该光电探测器在温度为25°C、湿度为30%的大气环境下2000小时内保持其初始值的87%。基于上述结果，我们认为WS/h-BN/LaVO异质结作为自供电光电器件具有广阔前景。
