Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Nanotechnology. 2023 May 2;34(28). doi: 10.1088/1361-6528/acccfd.
As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimensional h-BN photodetector was fabricated by using mechanically exfoliated h-BN flakes. The device achieved an ultra-low dark current (16.4 fA), high rejection ratio (/= 235) and high detectivity up to 1.28 × 10Jones at room temperature. Moreover, due to the wide bandgap and high thermal conductivity, the h-BN photodetector showed good thermal stability up to 300 °C, which is hard to realize for common semiconductor materials. The high detectivity and thermal stability of h-BN photodetector in this work showed the potential applications of h-BN photodetectors working in solar-blind region at high temperature.
作为一种超宽禁带半导体，六方氮化硼（h-BN）因其宽带隙和高热导率在深紫外光电探测中引起了极大关注。在这项工作中，通过机械剥离的 h-BN 薄片制备了金属-半导体-金属结构的二维 h-BN 光电探测器。该器件实现了超低暗电流（16.4 fA）、高抑制比（/= 235）和高达 1.28 × 10^10 Jones 的高探测率，在室温下。此外，由于宽带隙和高热导率，h-BN 光电探测器在高达 300°C 的温度下表现出良好的热稳定性，这对于常见的半导体材料来说很难实现。本工作中 h-BN 光电探测器的高探测率和热稳定性表明，h-BN 光电探测器在高温深紫外光区工作具有潜在应用。
