Yu Bo, Xu Zhiwei, Liu Hualin, Liu Yumeng, Ye Kanghua, Ke Zhiquan, Zhang Jiankai, Yu Huangzhong
School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China.
International School of Microelectronics, Dongguan University of Technology, Dongguan, Guangdong 523808, China.
ACS Appl Mater Interfaces. 2024 Jan 17;16(2):2408-2416. doi: 10.1021/acsami.3c16643. Epub 2024 Jan 3.
Despite the fact that perovskite solar cells (PSCs) are widely popular due to their superb power conversion efficiency (PCE), their further applications are still restricted by low stability and high-density defects. Especially, the weak binding and ion-electron properties of perovskite crystals make them susceptible to moisture attack under environmental stress. Herein, we report an overall sulfidation strategy via introduction of 1-pentanethiol (PT) into the perovskite film to inhibit bulk defects and stabilize Pb ions. It has been confirmed that the thiol groups in PT can stabilize uncoordinated Pb ions and passivate iodine vacancy defects by forming strong Pb-S bonds, thus reducing nonradiative recombination. Moreover, the favorable passivation process also optimizes the energy-level arrangement, induces better perovskite crystallization, and enhances the charge extraction in the full solar cells. Consequently, the PT-modified inverted device delivers a champion PCE of 22.46%, which is superior to that of the control device (20.21%). More importantly, the PT-modified device retains 91.5% of its initial PCE after storage in air for 1600 h and over 85% of its initial PCE after heating at 85 °C for 800 h. This work provides a new perspective to simultaneously improve the performance and stability of PSCs to satisfy their commercial applications.
尽管钙钛矿太阳能电池(PSC)因其卓越的功率转换效率(PCE)而广受欢迎,但其进一步应用仍受到低稳定性和高密度缺陷的限制。特别是,钙钛矿晶体的弱结合力和离子 - 电子特性使其在环境应力下易受湿气侵蚀。在此,我们报告了一种通过将1 - 戊硫醇(PT)引入钙钛矿薄膜来抑制体缺陷并稳定铅离子的整体硫化策略。已证实PT中的硫醇基团可以通过形成强Pb - S键来稳定未配位的铅离子并钝化碘空位缺陷,从而减少非辐射复合。此外,良好的钝化过程还优化了能级排列,诱导了更好的钙钛矿结晶,并增强了全太阳能电池中的电荷提取。因此,PT修饰的倒置器件的最佳PCE为22.46%,优于对照器件(20.21%)。更重要的是,PT修饰的器件在空气中储存1600小时后保留了其初始PCE的91.5%,在85°C加热800小时后保留了其初始PCE的85%以上。这项工作为同时提高PSC的性能和稳定性以满足其商业应用提供了新的视角。