Eom Hyeonjin, Hur Junyoung, Sung Sang-Keun, Jeong Jun-Ho, Park Inkyu
Carbon Neutral Technology R&D Department, Korea Institute of Industrial Technology (KITECH), Cheonan-si 31056, Republic of Korea.
Department of System Engineering, ITER Korea, Korea Institute of Fusion Energy (KFE), Daejeon 34133, Republic of Korea.
Nanotechnology. 2024 Feb 15;35(18). doi: 10.1088/1361-6528/ad2018.
Zinc oxide (ZnO) nanowires fabricated via wet chemical synthesis on flexible polymer substrates are inherently unstable against mechanical bending stress because of their high density and weak adhesion to the substrate. We introduce a novel method for controlling the density of such ZnO nanowire arrays using a three-dimensional corrugated metal substrate. These metal substrates, featuring extruded and recessed patterns fabricated via nanoimprint lithography, were employed as cathodes during the electrochemical deposition of ZnO nanowire arrays. The ZnO nanowire arrays synthesized on the patterned metal thin film exhibited smaller diameters and lower densities compared to those on non-patterned metal films. This reduction in density can be attributed to aligned nucleation and limited growth on the patterned metal surface. Crucially, ZnO nanowires synthesized on patterned metal substrates displayed remarkable mechanical robustness against external forces, a direct consequence of their reduced density. In contrast, nanowires synthesized on non-patterned metal substrates were broken under mechanical bending. Detailed morphological analyses performed after mechanical bending tests confirm that ZnO nanowires synthesized on nanoimprinted metal electrodes exhibited enhanced mechanical characteristics compared to those on non-patterned metal electrodes. These findings clearly demonstrate the promise of utilizing density-controlled ZnO nanowires in piezoelectric devices.
通过湿化学合成法在柔性聚合物基板上制备的氧化锌(ZnO)纳米线,由于其高密度以及与基板的弱附着力,在机械弯曲应力作用下本质上是不稳定的。我们介绍了一种使用三维波纹金属基板来控制此类ZnO纳米线阵列密度的新方法。这些通过纳米压印光刻制造的具有凸起和凹陷图案的金属基板,在ZnO纳米线阵列的电化学沉积过程中用作阴极。与在无图案金属薄膜上合成的ZnO纳米线阵列相比,在图案化金属薄膜上合成的ZnO纳米线阵列表现出更小的直径和更低的密度。密度的这种降低可归因于图案化金属表面上的对齐成核和有限生长。至关重要的是,在图案化金属基板上合成的ZnO纳米线对外力表现出显著的机械稳健性,这是其密度降低的直接结果。相比之下,在无图案金属基板上合成的纳米线在机械弯曲下会断裂。机械弯曲测试后进行的详细形态分析证实,与在无图案金属电极上合成的ZnO纳米线相比,在纳米压印金属电极上合成的ZnO纳米线表现出增强的机械特性。这些发现清楚地证明了在压电器件中利用密度可控的ZnO纳米线的前景。