Xu Sheng, Wei Yaguang, Kirkham Melanie, Liu Jin, Mai Wenjie, Davidovic Dragomir, Snyder Robert L, Wang Zhong Lin
School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
J Am Chem Soc. 2008 Nov 12;130(45):14958-9. doi: 10.1021/ja806952j. Epub 2008 Oct 16.
We report an approach for growing aligned ZnO nanowire arrays with a high degree control over size, orientation, dimensionality, uniformity, and possibly shape. Our method combines e-beam lithography and a low temperature hydrothermal method to achieve patterned and aligned growth of ZnO NWs at <100degreesC on general inorganic substrates, such as Si and GaN, without using catalyst. This approach opens up the possibility of applying ZnO nanowires as sensor arrays, piezoelectric antenna arrays, two-dimensional photonic crystals, IC interconnects, and nanogenerators.
我们报道了一种生长取向排列的氧化锌纳米线阵列的方法，该方法能高度控制纳米线的尺寸、取向、维度、均匀性以及可能的形状。我们的方法结合了电子束光刻技术和低温水热法，可在诸如硅和氮化镓等普通无机衬底上于低于100摄氏度的温度下实现氧化锌纳米线的图案化和取向生长，且无需使用催化剂。这种方法为将氧化锌纳米线应用于传感器阵列、压电天线阵列、二维光子晶体、集成电路互连以及纳米发电机开辟了可能性。
