Lv Qiaoya, Qiu Jian, Wen Quan, Li Da, Liu Jie, Li Dongling, Yuan Xingquan
Microsystem Research Center, Chongqing University, Chongqing, 400044, China.
College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, China.
Nanoscale. 2024 Feb 15;16(7):3714-3720. doi: 10.1039/d3nr06045d.
2D-piezoelectric materials are attractive for micro-electromechanical systems (MEMS), medical implants and wearable devices because of their numerous exceptional properties. 2D-hybrid organic-inorganic perovskites (HOIPs) have attracted extensive research interest due to their merits of structural diversity, good mechanical flexibility, and ease of fabrication. The electronic energy band, charge density and the elastic properties of 2D-HOIP-[CHNH]MX (M = Ge, Sn, Pb; X = Cl, Br, I) were investigated using first-principles calculations. The excellent piezoelectricity of 2D-HOIP-[CHNH]MX has been analyzed in detail. More importantly, 2D-[CHNH]MX have giant intrinsic positive and negative out-of-plane piezoelectric coefficients under the effect of van der Waals interaction. The and of [CHNH]SnBr are 82.720 pm V and -36.139 pm V, respectively, which are among the largest piezoelectric coefficients among all kinds of atomic-thick 2D materials reported. The high flexibility together with the giant out-of-plane piezoelectricity would endow these 2D-HOIP-[CHNH]MX with potential applications in ultrathin piezoelectric cantilever and diaphragm devices.
二维压电材料因其众多优异特性,在微机电系统(MEMS)、医疗植入物和可穿戴设备领域具有吸引力。二维有机-无机杂化钙钛矿(HOIPs)因其结构多样、良好的机械柔韧性和易于制造的优点,已引起广泛的研究兴趣。利用第一性原理计算研究了二维HOIP-[CHNH]MX(M = Ge、Sn、Pb;X = Cl、Br、I)的电子能带、电荷密度和弹性性质。详细分析了二维HOIP-[CHNH]MX优异的压电性。更重要的是,二维-[CHNH]MX在范德华相互作用的影响下具有巨大的本征正负面外压电系数。[CHNH]SnBr的 和 分别为82.720 pm V和-36. pm V,这是所有已报道的各种原子厚度二维材料中最大的压电系数之一。高柔韧性与巨大的面外压电性相结合,将使这些二维HOIP-[CHNH]MX在超薄压电悬臂梁和膜片器件中具有潜在应用。 (注:原文中“ 和 ”处表述不完整,可能影响准确理解,但按要求未添加解释)