Morais Natalia, Fujikata Junichi, Kwoen Jinkwan, Nakamura Takahiro, Ota Yasutomo, Arakawa Yasuhiko
Opt Express. 2024 Jan 29;32(3):4295-4304. doi: 10.1364/OE.514224.
We demonstrate a hybrid integrated laser by transfer printing an InAs/GaAs quantum dot (QD) amplifier on a Si waveguide with distributed Bragg reflectors (DBRs). The QD waveguide amplifier of 1.6 mm long was patterned in the form of an airbridge with the help of a spin-on-glass sacrificial layer and precisely integrated on the silicon-on-insulator (SOI) waveguide by pick-and-place assembly using an elastomer stamp. Laser oscillation was observed around the wavelength of 1250 nm with a threshold current of 47 mA at room temperature and stable operation up to 80°C. Transfer printing of the long QD amplifiers will enable the development of various hybrid integrated laser devices that leverage superior properties of QDs as laser gain medium.
我们通过将InAs/GaAs量子点（QD）放大器转移印刷到带有分布式布拉格反射器（DBR）的硅波导上，展示了一种混合集成激光器。借助旋涂玻璃牺牲层，将1.6毫米长的量子点波导放大器制作成气桥形式，并通过使用弹性体印章的拾取和放置组装工艺，精确地集成到绝缘体上硅（SOI）波导上。在室温下，观察到波长约为1250 nm处的激光振荡，阈值电流为47 mA，并且在高达80°C的温度下能够稳定运行。长量子点放大器的转移印刷将推动各种混合集成激光器件的发展，这些器件利用量子点作为激光增益介质的卓越特性。
