Su Longxing, Wu Sudong, Wang Xiaofei, Sun Ke, Yun Teng, Du Yongping, Lu Jianguo
Opt Lett. 2024 Feb 1;49(3):474-477. doi: 10.1364/OL.513737.
With the rapid development of information era, the traditional von Neumann architecture faces the computing bottleneck, and integration of memory and perception is regarded as a potential solution. Herein, a GaO/Si heterojunction based multi-modulated optoelectronic synaptic device is fabricated and demonstrated. As stimulated by ultraviolet (UV) optical spikes, the heterojunction device reveals typical synaptic functions of excitatory-postsynaptic current (EPSC), paired-pulse facilitation (PPF), spike-timing-dependent plasticity (STDP), and switch between short-term memory (STM) and long-term memory (LTM). In addition, stronger stimulations like higher reading voltage, stronger optical stimulated intensity, and longer pulse duration time can significantly prolong the attenuation of EPSC, which contributes to the improvement of the forgetting process. Our work provides a potential strategy for future neuromorphic computation through a UV light driven stimulation.
随着信息时代的快速发展，传统的冯·诺依曼架构面临计算瓶颈，而存储器与感知的集成被视为一种潜在的解决方案。在此，制备并展示了一种基于GaO/Si异质结的多调制光电突触器件。在紫外（UV）光脉冲刺激下，该异质结器件展现出兴奋性突触后电流（EPSC）、双脉冲易化（PPF）、脉冲时间依赖可塑性（STDP）等典型突触功能，以及短期记忆（STM）和长期记忆（LTM）之间的切换。此外，更强的刺激，如更高的读取电压、更强的光刺激强度和更长的脉冲持续时间，可显著延长EPSC的衰减，这有助于改善遗忘过程。我们的工作通过紫外光驱动刺激为未来的神经形态计算提供了一种潜在策略。
