通过SAG-HVPE法制备的长富铟铟镓砷纳米线

Long indium-rich InGaAs nanowires by SAG-HVPE.

作者信息

Chereau Emmanuel, Grégoire Gabin, Avit Geoffrey, Taliercio Thierry, Staudinger Philipp, Schmid Heinz, Bougerol Catherine, Trassoudaine Agnès, Gil Evelyne, LaPierre Ray R, André Yamina

机构信息

Université Clermont Auvergne, CNRS, Clermont Auvergne INP, Institut Pascal, F-63000 Clermont-Ferrand, France.

IES, Univ. Montpellier, CNRS, Montpellier F-34000, France.

出版信息

Nanotechnology. 2024 Feb 19;35(19). doi: 10.1088/1361-6528/ad263a.

DOI:10.1088/1361-6528/ad263a

PMID:38316054

Abstract

We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50m hand high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.

摘要

我们展示了使用氢化物气相外延（HVPE）在GaAs（111）B衬底上选择性区域生长InGaAs纳米线（NWs）。获得了超过50μm/h的高生长速率和高纵横比的NWs。通过能量色散X射线光谱研究了沿NWs的成分，铟的平均成分是84%。这与从NWs的光致发光光谱估计的78%的成分一致。通过透射电子显微镜对NWs进行晶体结构分析表明，存在与闪锌矿/纤锌矿多型性相关的随机堆垛层错。这项工作证明了HVPE生长高纵横比InGaAs NW阵列的能力。