Roy Shrawan, Yang Xiaodong, Gao Jie
Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA.
Department of Mechanical Engineering, Stony Brook University, Stony Brook, NY, 11794, USA.
Sci Rep. 2024 Feb 15;14(1):3860. doi: 10.1038/s41598-024-54185-8.
Monolayer tungsten disulfide (1L-WS) is a direct bandgap atomic-layered semiconductor material with strain tunable optical and optoelectronic properties among the monolayer transition metal dichalcogenides (1L-TMDs). Here, we demonstrate biaxial strain tuned upconversion photoluminescence (UPL) from exfoliated 1L-WS flakes transferred on a flexible polycarbonate cruciform substrate. When the biaxial strain applied to 1L-WS increases from 0 to 0.51%, it is observed that the UPL peak position is redshifted by up to 60 nm/% strain, while the UPL intensity exhibits exponential growth with the upconversion energy difference varying from - 303 to - 120 meV. The measured power dependence of UPL from 1L-WS under biaxial strain reveals the one photon involved multiphonon-mediated upconversion mechanism. The demonstrated results provide new opportunities in advancing TMD-based optical upconversion devices for future flexible photonics and optoelectronics.
单层二硫化钨（1L-WS）是一种直接带隙原子层半导体材料，在单层过渡金属二卤化物（1L-TMDs）中具有应变可调的光学和光电特性。在此，我们展示了在柔性聚碳酸酯十字形衬底上转移的剥离1L-WS薄片的双轴应变调谐上转换光致发光（UPL）。当施加到1L-WS的双轴应变从0增加到0.51%时，观察到UPL峰值位置以高达60 nm/%应变的幅度红移，而上转换发光强度随着上转换能量差从-303 meV变化到-120 meV呈现指数增长。在双轴应变下测量的1L-WS的上转换发光功率依赖性揭示了单光子参与的多声子介导的上转换机制。所展示的结果为推进基于TMD的光学上转换器件用于未来的柔性光子学和光电子学提供了新的机会。
