Haque Naeem M Ashikul, Rahman Ayon Ahmed Sidrat, Ali Md Mintu, Amin Md Ruhul, Kabir M Humayan, Sattar Md Abdus, Tabassum Samia, Huda Liton Md Nurul
Department of Glass & Ceramic Engineering, Rajshahi University of Engineering & Technology (RUET), Rajshahi, 6204, Bangladesh.
Department of Materials Science & Engineering, University of Rajshahi, Rajshahi, 6205, Bangladesh.
Heliyon. 2024 Feb 16;10(4):e26545. doi: 10.1016/j.heliyon.2024.e26545. eCollection 2024 Feb 29.
The present study explores the structural, morphological, optical, and electrical properties of spray pyrolyzed (Al-Zn) dual-doped CdO thin films. The un-doped and (Al-Zn) dual-doped CdO thin films have been deposited on glass substrate using spray pyrolysis route at 325 °C. The physical properties of the doped samples were analyzed as a function of Zn concentration (2-5 mol%) with constant Al (3 mol%) concentration. XRD analysis confirms the successful incorporation of (Al-Zn) dual-doping into CdO crystal as well as the polycrystalline nature was evident. No phase transitions were apparent from XRD data while revealing the single cubic structure of all the samples. The surface morphology of the samples studied by SEM. It shows the formation of rock-shaped microstructure and the variation of grain size with doping concentrations. Optical analysis was done using UV-vis spectroscopy within the range of 300-1200 nm. Maximum value of transmittance was attained for 3% (Zn-Al)-doped CdO sample. The dual doping exhibits the broadening of band gap values (2.61-3.84 eV) whereas a decrease in extinction coefficient was noticed as a function of Zn doping concentration. Electrical analysis was done using the four-probe method and a high resistivity was seen for higher Zn concentration. Obtained results and precise comparison with some similar films suggested that 2% Zn and 3% Al co-doping can be a suitable candidate for optoelectronic devices.
本研究探索了喷雾热解（Al-Zn）双掺杂CdO薄膜的结构、形态、光学和电学性质。未掺杂和（Al-Zn）双掺杂的CdO薄膜已通过喷雾热解路线在325℃下沉积在玻璃基板上。在Al浓度恒定为3mol%的情况下，分析了掺杂样品的物理性质与Zn浓度（2-5mol%）的函数关系。XRD分析证实了（Al-Zn）双掺杂成功掺入CdO晶体，同时多晶性质明显。XRD数据未显示相变，同时揭示了所有样品的单一立方结构。通过SEM研究了样品的表面形态。它显示了岩石状微观结构的形成以及晶粒尺寸随掺杂浓度的变化。使用紫外可见光谱在300-1200nm范围内进行了光学分析。3%（Zn-Al）掺杂的CdO样品获得了最大透过率值。双掺杂表现出带隙值变宽（2.61-3.84eV），而消光系数随Zn掺杂浓度的增加而降低。使用四探针法进行了电学分析，较高的Zn浓度显示出高电阻率。所得结果以及与一些类似薄膜的精确比较表明，2%Zn和3%Al共掺杂可能是光电器件的合适候选材料。
