Manoharan C, Jothibas M, Jeyakumar S Johnson, Dhanapandian S
Department of Physics, Annamalai University, Annamalai Nagar 608 002, India.
Department of Physics, T.B.M.L. College, Porayar 609 307, India.
Spectrochim Acta A Mol Biomol Spectrosc. 2015 Jun 15;145:47-53. doi: 10.1016/j.saa.2015.02.099. Epub 2015 Feb 26.
Undoped and zirconium doped indium oxide (ZrIO) thin films were deposited on glass substrate at a substrate temperature of 450°C by spray pyrolysis method. The effect of zirconium (Zr) dopant concentration (0-11 at.%) on the structural, morphological, optical and electrical properties of n-type ZrIO films were studied. X-ray diffraction (XRD) results confirmed the polycrystalline nature of the ZrIO thin film with cubic structure. The grain size was decreased from 25 to 15.75 nm with Zr doping. The scanning electron microscopy (SEM) showed that the surface morphology of the films were changed with Zr doping. The surface roughness of the films was investigated by atomic force microscopy (AFM) and was found to be increased with the increasing of Zr doping percentage. A blue shift of the optical band gap was observed. The optical band was gap decreased from 3.50 to 3.0eV with increase in Zr concentrations. Room temperature photoluminescence (PL) measurement of the deposited films indicated the incorporation of Zr in In2O3 lattice. The film had low resistivity of 6.4 × 10(-4)Ωcm and higher carrier concentration of 2.5 × 10(20) was obtained at a doping ratio of 7 at.%.
通过喷雾热解法在450°C的衬底温度下将未掺杂和锆掺杂的氧化铟（ZrIO）薄膜沉积在玻璃衬底上。研究了锆（Zr）掺杂浓度（0-11原子％）对n型ZrIO薄膜的结构、形态、光学和电学性能的影响。X射线衍射（XRD）结果证实了具有立方结构的ZrIO薄膜的多晶性质。随着Zr掺杂，晶粒尺寸从25nm减小到15.75nm。扫描电子显微镜（SEM）表明，薄膜的表面形态随Zr掺杂而变化。通过原子力显微镜（AFM）研究了薄膜的表面粗糙度，发现其随着Zr掺杂百分比的增加而增加。观察到光学带隙的蓝移。随着Zr浓度的增加，光学带隙从3.50eV降低到3.0eV。对沉积薄膜进行的室温光致发光（PL）测量表明Zr掺入了In2O3晶格中。在7原子％的掺杂比下，薄膜具有6.4×10（-4）Ωcm的低电阻率和2.5×10（20）的较高载流子浓度。
