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由近零介电常数材料中的介电腔介导的纠缠暗态。

Entangled dark state mediated by a dielectric cavity within epsilon-near-zero materials.

作者信息

Ma Yun, Wang Nuo, Liu Qi, Tian Yu, Tian Zhaohua, Gu Ying

机构信息

State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, People's Republic of China.

Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter & Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, People's Republic of China.

出版信息

Nanotechnology. 2024 Mar 18;35(23). doi: 10.1088/1361-6528/ad2e4b.

Abstract

Two emitters can be entangled by manipulating them through optical fields within a photonic cavity. However, maintaining entanglement for a long time is challenging due to the decoherence of the entangled qubits, primarily caused by cavity loss and atomic decay. Here, we found the entangled dark state between two emitters mediated by a dielectric cavity within epsilon-near-zero (ENZ) materials, ensuring entanglement maintenance over an extended period. To obtain the entangled dark state, we derived an effective model with degenerate mode modulation. In the dielectric cavities within ENZ materials, the decay rate of emitters can be regarded as 0, which is the key to achieving the entangled dark state. Meanwhile, the dark state immune to cavity loss exists when two emitters are in symmetric positions in the dielectric cavity. Additionally, by adjusting the emitters to specific asymmetric positions, it is possible to achieve transient entanglement with higher concurrence. By overcoming the decoherence of the entangled qubits, this study demonstrates stable, long-term entanglement with ENZ materials, holding significant importance for applications such as nanodevice design for quantum communication and quantum information processing.

摘要

通过在光子腔内利用光场对两个发射器进行操控,可使它们发生纠缠。然而,由于纠缠量子比特的退相干,主要是由腔损耗和原子衰变导致的,长时间维持纠缠具有挑战性。在此,我们发现了由处于近零介电常数(ENZ)材料中的介质腔介导的两个发射器之间的纠缠暗态,从而确保了在较长时间内维持纠缠。为了获得纠缠暗态,我们推导了一个具有简并模调制的有效模型。在ENZ材料中的介质腔内,发射器的衰变率可被视为0,这是实现纠缠暗态的关键。同时,当两个发射器在介质腔中处于对称位置时,存在对腔损耗免疫的暗态。此外,通过将发射器调整到特定的非对称位置,有可能实现具有更高并发度的瞬态纠缠。通过克服纠缠量子比特的退相干,本研究展示了与ENZ材料的稳定、长期纠缠,这对于量子通信和量子信息处理等纳米器件设计应用具有重要意义。

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