Wu Hongxin, Li W
School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, China.
Heliyon. 2024 Feb 15;10(4):e26328. doi: 10.1016/j.heliyon.2024.e26328. eCollection 2024 Feb 29.
In this paper, AlO ceramics co-doped with 0.3 wt%CuO-0.6 wt%TiO-0.1 wt%MnCO (CTM, the same below) were prepared. The effect of CTM and UV irradiation on the sintering behavior, microstructure, and microwave dielectric properties have been investigated systematically. The results indicate that the sintering temperature of AlO ceramics could be effectively decreased to about 1200 °C by adding 1 wt% CTM. UV irradiation can further increase the density of the AlO ceramics, improve its microstructure and microwave dielectric properties. By using the AlO powders UV irradiated for 15 min as raw materials, CTM co-doped AlO ceramics can sintered at 1200 °C with a high density of 3.93 g/cm and a very high Q × value of 175,086 GHz.
本文制备了共掺杂0.3 wt%CuO - 0.6 wt%TiO - 0.1 wt%MnCO（CTM，下同）的AlO陶瓷。系统研究了CTM和紫外线辐照对其烧结行为、微观结构及微波介电性能的影响。结果表明，添加1 wt%CTM可有效将AlO陶瓷的烧结温度降至约1200℃。紫外线辐照可进一步提高AlO陶瓷的密度，改善其微观结构和微波介电性能。以经15分钟紫外线辐照的AlO粉末为原料，CTM共掺杂的AlO陶瓷可在1200℃烧结，具有3.93 g/cm的高密度和175,086 GHz的极高品质因数Q×值。
