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揭示CsZnCl晶体中本征自陷激子的锑掺杂与三色发光

Unveiling Sb Doping and Tricolor Luminescence from Intrinsic Self-Trapped Excitons in CsZnCl Crystals.

作者信息

Zhang Wenxia, Chen Guanghao, Lu Xianghua, Wang Yuchan, Zhang Nan, Zhang Qian, Liu Xiaoyu, Tang Xiaosheng

机构信息

School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, People's Republic of China.

BOE HC SemiTek Corporation, Yiwu, Zhejiang 322009, People's Republic of China.

出版信息

J Phys Chem Lett. 2024 Mar 7;15(9):2616-2623. doi: 10.1021/acs.jpclett.4c00090. Epub 2024 Feb 29.

Abstract

Zero-dimensional (0D) lead-free halide perovskites have lately received significant interest owing to their captivating broadband emissions. An in-depth understanding of the luminescence mechanism of self-trapped excitons (STEs) and realization of effective regulation of luminescence properties have become a major challenge in the research of lead-free metal halides. Herein, we have synthesized the CsZnCl and Sb-doped CsZnCl crystals and conducted a comprehensive investigation into their distinct electronic structures and optical characteristics. The findings from both experimental and theoretical investigations indicate that the tricolor luminescence in CsZnCl and blue emission in Sb-doped CsZnCl stem from intrinsic STEs, and the near-infrared emission originates from extrinsic STEs associated with the Sb ion in Sb-doped CsZnCl. Sb doping increases the quantum yield of CsZnCl to a large extent. In addition, intersystem crossing, exciton self-trapping, and lattice relaxation are the main reasons for the large Stokes shift. The present study is expected to provide a novel perspective for researchers in comprehending the luminescent mechanism of STEs and advancing the utilization of 0D lead-free metal halides in optoelectronic applications.

摘要

零维(0D)无铅卤化物钙钛矿近来因其迷人的宽带发射而备受关注。深入理解自陷激子(STE)的发光机制以及实现发光性能的有效调控已成为无铅金属卤化物研究中的一项重大挑战。在此,我们合成了CsZnCl和Sb掺杂的CsZnCl晶体,并对它们独特的电子结构和光学特性进行了全面研究。实验和理论研究的结果表明,CsZnCl中的三色发光以及Sb掺杂的CsZnCl中的蓝色发射源于本征STE,而近红外发射则源于与Sb掺杂的CsZnCl中的Sb离子相关的非本征STE。Sb掺杂在很大程度上提高了CsZnCl的量子产率。此外,系间窜越、激子自陷和晶格弛豫是产生大斯托克斯位移的主要原因。本研究有望为研究人员理解STE的发光机制以及推动0D无铅金属卤化物在光电子应用中的利用提供一个新的视角。

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