Seok Yongwook, Jang Hanbyeol, Choi YiTaek, Ko Yeonghyeon, Kim Minje, Im Heungsoon, Watanabe Kenji, Taniguchi Takashi, Seol Jae Hun, Chee Sang-Soo, Nah Junghyo, Lee Kayoung
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
ACS Nano. 2024 Mar 19;18(11):8099-8106. doi: 10.1021/acsnano.3c11613. Epub 2024 Mar 7.
Creating a high-frequency electron system demands a high saturation velocity (υ). Herein, we report the high-field transport properties of multilayer van der Waals (vdW) indium selenide (InSe). The InSe is on a hexagonal boron nitride substrate and encapsulated by a thin, noncontinuous In layer, resulting in an impressive electron mobility reaching 2600 cm/(V s) at room temperature. The high-mobility InSe achieves υ exceeding 2 × 10 cm/s, which is superior to those of other gapped vdW semiconductors, and exhibits a 50-60% improvement in υ when cooled to 80 K. The temperature dependence of υ suggests an optical phonon energy (ω) for InSe in the range of 23-27 meV, previously reported values for InSe. It is also notable that the measured υ values exceed what is expected according to the optical phonon emission model due to weak electron-phonon scattering. The superior υ of our InSe, despite its relatively small ω, reveals its potential for high-frequency electronics, including applications to control cryogenic quantum computers in close proximity.
创建一个高频电子系统需要高饱和速度（υ）。在此，我们报告多层范德华（vdW）硒化铟（InSe）的高场输运特性。InSe位于六方氮化硼衬底上，并被一层薄的、不连续的In层封装，在室温下实现了高达2600 cm/(V s)的令人印象深刻的电子迁移率。高迁移率的InSe实现了υ超过2×10 cm/s，优于其他带隙vdW半导体，并且在冷却到80 K时υ提高了50 - 60%。υ对温度的依赖性表明InSe的光学声子能量（ω）在23 - 27 meV范围内，这与之前报道的InSe值一致。同样值得注意的是，由于弱电子 - 声子散射，测量得到的υ值超过了根据光学声子发射模型预期的值。我们的InSe尽管ω相对较小，但其优越的υ揭示了其在高频电子学中的潜力，包括在近距离控制低温量子计算机的应用。
