Santosh R, Chandra S, Kumar V, Tripathi B M M, Kumar Pankaj
Department of Electronics and Communication Engineering, Velagapudi Ramakrishna Siddhartha College of Engineering, Kanuru, Vijayawada, Andhra Pradesh, 520007, India.
Department of Electronic and Communication Engineering, Lendi Institute of Engineering and Technology, Jonnada, Vizianagaram, Andhra Pradesh, 535005, India.
J Mol Model. 2024 Mar 11;30(4):99. doi: 10.1007/s00894-024-05887-3.
The new equations have been developed for the structural and electronic properties using the plasmon calculations for the first time for 2-D MoX structures. Literature shows still an extensive study is required on the stability and optical properties of MoX2 under different hydrostatic pressures and thermal properties under different temperatures using the first principles, for electronic industrial applications. The stability is analyzed using binding energy and phonon calculations. The phase transition of metallization of MoX is discussed using band structure calculations under different hydrostatic pressures. The calculated work function shows the photoemission starts from the threshold frequency of 4.189×10 cm, 3.184×10 cm, and 3.651×10 cm, respectively, for MoS, MoSe, and MoTe materials. The optical properties such as refractive index n(0), and static dielectric permittivity ε(0) for three successive materials are calculated under different hydrostatic pressures, applicable for optoelectronic applications. The calculated theoretical and computational values agree well with each other and also agree with reported and experimental values. Some of the values are calculated for the first time.
The theoretical equations are derived using the molecular weight, effective valence electrons, and density of molecule of MoX structures. The simulation work is performed using GGA-PBE approximation in the CASTEP simulation package with DFT+D semi-empirical dispersion correction. An ultra-soft pseudopotential representation calculates the electronic and optical properties with a finite basis set kinetic energy cut-off of 381.0 eV. Each geometry has been optimized using Broyden, Fletcher, Goldfarb, and Shanno's (BFGS) algorithm for 100 iterations with a fixed basis quality variable cell method and finite electronic minimization parameters. The phonon calculations were performed using TDFT with a kinetic energy cut of 460 eV in a norm-conserving linear response method. The interpolation with a finite dispersion quality and q-vector grid spacing is performed.
首次针对二维MoX结构通过等离激元计算得出了用于结构和电子性质的新方程。文献表明,对于电子工业应用而言,仍需要利用第一性原理对不同静水压力下MoX₂的稳定性和光学性质以及不同温度下的热性质进行广泛研究。使用结合能和声子计算来分析稳定性。在不同静水压力下利用能带结构计算讨论MoX的金属化相变。计算得到的功函数表明,对于MoS、MoSe和MoTe材料,光发射分别从4.189×10 cm、3.184×10 cm和3.651×10 cm的阈值频率开始。在不同静水压力下计算了三种连续材料的光学性质,如折射率n(0)和静态介电常数ε(0),适用于光电子应用。计算得到的理论值和计算值相互吻合良好,并且与报道值和实验值也相符。其中一些值是首次计算得出的。
利用MoX结构的分子量、有效价电子和分子密度推导理论方程。在CASTEP模拟包中使用GGA-PBE近似并结合DFT+D半经验色散校正进行模拟工作。采用超软赝势表示法,以381.0 eV的有限基组动能截止值计算电子和光学性质。每种几何结构均使用布罗伊登、弗莱彻、戈德法布和沙诺(BFGS)算法进行了100次迭代优化,采用固定基组质量可变晶胞方法和有限电子最小化参数。使用规范守恒线性响应方法,在动能截止值为460 eV的情况下,通过含时密度泛函理论(TDFT)进行声子计算。进行了具有有限色散质量和q矢量网格间距的插值。