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具有低热线性膨胀系数和低吸水率的聚(酯酰亚胺)(VII):一种在10 GHz实现超低损耗因子的策略。

Poly(ester imide)s with Low Linear Coefficients of Thermal Expansion and Low Water Uptake (VII): A Strategy to Achieve Ultra-Low Dissipation Factors at 10 GHz.

作者信息

Hasegawa Masatoshi, Fukuda Taro, Ishii Junichi

机构信息

Department of Chemistry, Faculty of Science, Toho University, 2-2-1 Miyama, Funabashi 274-8510, Chiba, Japan.

出版信息

Polymers (Basel). 2024 Feb 28;16(5):653. doi: 10.3390/polym16050653.

DOI:10.3390/polym16050653
PMID:38475336
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10934693/
Abstract

In this study, a series of ester-linked tetracarboxylic dianhydrides (TCDAs) with 2,6-naphthalene-containing longitudinally extended structures consisting of different numbers of aromatic rings ( = 6-8) was synthesized to obtain novel modified polyimides, poly(ester imide)s (PEsIs). These TCDAs were fully compatible with the conventional manufacturing processes of conventional polyimide (PI) systems. As an example, the PEsI film obtained from the ester-linked TCDA ( = 8) and an ester-linked diamine achieved unprecedented outstanding dielectric properties without the support of fluorinated monomers, specifically an ultra-low dissipation factor (tan ) of 0.00128 at a frequency of 10 GHz (50% RH and 23 °C), in addition to an extremely high glass transition temperature () of 365 °C, extremely low linear coefficient of thermal expansion (CTE) of 6.8 ppm K, suppressed water uptake (0.24%), requisite film ductility, and a low haze. Consequently, certain PEsI films developed in this study are promising candidates for heat-resistant dielectric substrates for use in 5G-compatible high-speed flexible printed circuit boards (FPCs). The chemical and physical factors denominating tan are also discussed.

摘要

在本研究中,合成了一系列具有含2,6 - 萘的纵向延伸结构且由不同数量芳环(= 6 - 8)组成的酯键连接的四羧酸二酐(TCDAs),以获得新型改性聚酰亚胺,即聚(酯酰亚胺)(PEsIs)。这些TCDAs与传统聚酰亚胺(PI)体系的常规制造工艺完全兼容。例如,由酯键连接的TCDA(= 8)和酯键连接的二胺制得的PEsI薄膜在没有含氟单体支持的情况下实现了前所未有的优异介电性能,具体而言,在10 GHz频率(50%相对湿度和23 °C)下具有0.00128的超低损耗因子(tanδ),此外还具有365 °C的极高玻璃化转变温度(Tg)、6.8 ppm K的极低线性热膨胀系数(CTE)、抑制的吸水率(0.24%)、所需的薄膜延展性和低雾度。因此,本研究中开发的某些PEsI薄膜有望成为用于5G兼容高速挠性印刷电路板(FPCs)的耐热介电基板的候选材料。还讨论了决定tanδ的化学和物理因素。

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