Rani Adila, Sultan M Junaid, Ren Wanqi, Bag Atanu, Lee Ho Jin, Lee Nae-Eung, Kim Tae Geun
Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea.
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea.
Small. 2024 Aug;20(31):e2310013. doi: 10.1002/smll.202310013. Epub 2024 Mar 13.
Nanomaterials like graphene and transition metal dichalcogenides are being explored for developing artificial photosensory synapses with low-power optical plasticity and high retention time for practical nervous system implementation. However, few studies are conducted on Tellurium (Te)-based nanomaterials due to their direct and small bandgaps. This paper reports the superior photo-synaptic properties of covalently bonded Tellurium sulfur oxide (TeSO) and Tellurium selenium oxide (TeSeO)nanomaterials, which are fabricated by incorporating S and Se atoms on the surface of Te multiropes using vapor deposition. Unlike pure Te multiropes, the TeSO and TeSeO multiropes exhibit controllable temporal dynamics under optical stimulation. For example, the TeSO multirope-based transistor displays a photosensory synaptic response to UV light (λ = 365 nm). Furthermore, the TeSeO multirope-based transistor exhibits photosensory synaptic responses to UV-vis light (λ = 365, 565, and 660 nm), reliable electrical performance, and a combination of both photodetector and optical artificial synaptic properties with a maximum responsivity of 1500 AW to 365 nm UV light. This result is among the highest reported for Te-heterostructure-based devices, enabling optical artificial synaptic applications with low voltage spikes (1 V) and low light intensity (21 µW cm), potentially useful for optical neuromorphic computing.
诸如石墨烯和过渡金属二硫属化物之类的纳米材料正在被探索用于开发具有低功耗光学可塑性和高保持时间的人工光感突触,以实现实际的神经系统应用。然而,由于碲(Te)基纳米材料的直接带隙小,对其进行的研究很少。本文报道了共价键合的碲硫氧化物(TeSO)和碲硒氧化物(TeSeO)纳米材料优异的光突触特性,这些材料是通过气相沉积法在碲多股线表面引入硫和硒原子制备而成的。与纯碲多股线不同,TeSO和TeSeO多股线在光刺激下表现出可控的时间动态特性。例如,基于TeSO多股线的晶体管对紫外光(λ = 365 nm)表现出光感突触响应。此外,基于TeSeO多股线的晶体管对紫外-可见光(λ = 365、565和660 nm)表现出光感突触响应、可靠的电学性能,并且兼具光电探测器和光学人工突触特性,对365 nm紫外光的最大响应度为1500 AW。该结果是基于碲异质结构的器件所报道的最高结果之一,能够实现低电压尖峰(1 V)和低光强度(21 µW/cm²)的光学人工突触应用,可能对光学神经形态计算有用。