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在环境条件下,SbBr 后处理 CsPbBr 量子点提高了光致发光稳定性和缺陷钝化。

Improved photoluminescence stability and defect passivation in SbBr post-treated CsPbBr quantum dots under ambient conditions.

机构信息

Department of Physics, Amrita School of Physical Sciences, Amrita Vishwa Vidyapeetham, Coimbatore, Tamil Nadu, India.

Amrita Center for Industrial Research & Innovation (ACIRI), Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Coimbatore, Tamil Nadu, India.

出版信息

Luminescence. 2024 Mar;39(3):e4706. doi: 10.1002/bio.4706.

DOI:10.1002/bio.4706
PMID:38483095
Abstract

Inorganic cesium lead halide perovskites have evoked wide popularity because of their excellent optoelectronic properties, high photoluminescence (PL) quantum yield (PLQY), and narrowband emission. Here, cesium lead bromide (CsPbBr ) quantum dots (QDs) were synthesized via the ligand-assisted re-precipitation method. Post-synthesis treatment of CsPbBr QDs using antimony tribromide improved the PL stability and optoelectronic properties of the QDs. In addition, the PLQY of the post-treated sample was enhanced to 91% via post-treatment, and the luminescence observed was maintained for 8 days. The post-synthesis treatment ensured defect passivation and improved the stability of CsPbBr perovskite QDs. High-resolution transmission electron microscopy revealed the presence of more ordered, uniform-sized CsPbBr QDs after post-synthesis treatment, and the uniformity of the sample improved as the day passed. The formation of a mixed crystal phase was observed from X-ray diffraction in both as-synthesized, as well as post-treated QDs samples with the possibility of a polycrystalline nature in the post-treated CsPbBr QDs as per the selected area electron diffraction pattern. The X-ray photoelectron spectroscopy spectra confirmed the presence of antimony and the possibility of defect passivation in the post-treated samples. These QDs can act as potential candidates in various optoelectronic applications such as photodetectors and light-emitting diodes due to their high PLQY and longer lifetime.

摘要

无机铯铅卤钙钛矿因其优异的光电性能、高光致发光(PL)量子产率(PLQY)和窄带发射而受到广泛关注。在此,通过配体辅助再沉淀法合成了铯铅溴(CsPbBr )量子点(QDs)。使用三溴化锑对 CsPbBr QDs 进行后合成处理可以提高 QDs 的 PL 稳定性和光电性能。此外,通过后处理,后处理样品的 PLQY 增强到 91%,并且观察到的发光可以持续 8 天。后合成处理可以确保缺陷钝化并提高 CsPbBr 钙钛矿 QDs 的稳定性。高分辨率透射电子显微镜显示,后合成处理后存在更多有序、均匀尺寸的 CsPbBr QDs,并且随着时间的推移,样品的均匀性得到改善。从 X 射线衍射可以观察到在合成的和后处理的 QDs 样品中都形成了混合晶体相,并且根据选区电子衍射图案,后处理的 CsPbBr QDs 可能具有多晶性质。X 射线光电子能谱光谱证实了后处理样品中存在锑和缺陷钝化的可能性。由于这些 QDs 具有高光致发光量子产率和较长的寿命,因此它们可以作为各种光电应用(如光电探测器和发光二极管)的潜在候选材料。

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