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在范德华多铁异质结构中通过可控磁各向异性切换本征磁斯格明子

Switching Intrinsic Magnetic Skyrmions with Controllable Magnetic Anisotropy in van der Waals Multiferroic Heterostructures.

作者信息

Wang Ze-Quan, Xue Feng, Qiu Liang, Wang Zhe, Wu Ruqian, Hou Yusheng

机构信息

Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.

Department of Physics, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou, Guangdong 510632, China.

出版信息

Nano Lett. 2024 Apr 10;24(14):4117-4123. doi: 10.1021/acs.nanolett.3c05024. Epub 2024 Mar 20.

Abstract

Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet challenging for such applications. Based on first-principles studies, we find that switching between intrinsic magnetic skyrmion and high-temperature ferromagnetic states can be achieved in the two-dimensional van der Waals (vdW) multiferroic heterostructure CrSeI/InTe by reversing the ferroelectric polarization of InTe. The core mechanism of this switching is traced to the controllable magnetic anisotropy of CrSeI influenced by the ferroelectric polarization of InTe. We propose a useful descriptor linking the presence of magnetic skyrmions to magnetic parameters and validate this connection through studies of a variety of similar vdW multiferroic heterostructures. Our work demonstrates that manipulating magnetic skyrmions via tunable magnetic anisotropies in vdW multiferroic heterostructures represents a highly promising and energy-efficient strategy for the future development of spintronics.

摘要

磁斯格明子是纳米尺度上具有拓扑非平凡性的涡旋自旋纹理,已成为自旋电子器件潜在的信息载体。对于此类应用而言,高效创建和擦除磁斯格明子的能力至关重要但也颇具挑战。基于第一性原理研究,我们发现通过反转InTe的铁电极化,可在二维范德华(vdW)多铁性异质结构CrSeI/InTe中实现本征磁斯格明子与高温铁磁态之间的切换。这种切换的核心机制可追溯到受InTe铁电极化影响的CrSeI可控磁各向异性。我们提出了一个将磁斯格明子的存在与磁参数联系起来的有用描述符,并通过对各种类似vdW多铁性异质结构的研究验证了这种联系。我们的工作表明,通过vdW多铁性异质结构中可调谐的磁各向异性来操控磁斯格明子,代表了自旋电子学未来发展中一种极具前景且节能的策略。

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